2STBN15D100 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2STBN15D100
Código: BN15D100
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 70 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 100 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 12 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 750
Paquete / Cubierta: TO263
Búsqueda de reemplazo de 2STBN15D100
2STBN15D100 Datasheet (PDF)
2stbn15d100.pdf
2STBN15D100Low voltage NPN power Darlington transistorFeatures Good hFE linearity High fT frequencyTAB Monolithic Darlington configuration with integrated antiparallel collector-emitter diode3Application1 Linear and switching industrial equipmentDPAKDescriptionThe device is manufactured in planar technology with base island layout and monolithic
2stbn15d100t4.pdf
2STBN15D100Low voltage NPN power Darlington transistorFeatures Good hFE linearity High fT frequencyTAB Monolithic Darlington configuration with integrated antiparallel collector-emitter diode3Application1 Linear and switching industrial equipmentDPAKDescriptionThe device is manufactured in planar technology with base island layout and monolithic
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