2STBN15D100 Specs and Replacement
Type Designator: 2STBN15D100
SMD Transistor Code: BN15D100
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 70 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 750
Package: TO263
2STBN15D100 Substitution
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2STBN15D100 datasheet
2STBN15D100 Low voltage NPN power Darlington transistor Features Good hFE linearity High fT frequency TAB Monolithic Darlington configuration with integrated antiparallel collector-emitter diode 3 Application 1 Linear and switching industrial equipment D PAK Description The device is manufactured in planar technology with base island layout and monolithic... See More ⇒
2STBN15D100 Low voltage NPN power Darlington transistor Features Good hFE linearity High fT frequency TAB Monolithic Darlington configuration with integrated antiparallel collector-emitter diode 3 Application 1 Linear and switching industrial equipment D PAK Description The device is manufactured in planar technology with base island layout and monolithic... See More ⇒
Detailed specifications: 2N869AX, 2N869AXCSM, 2N869AXDCSM, 2N6676T1, 2N6676T3, 2N6678M3A, 2N6678T1, 2N6678T3, BC639, 2STD1360, 2STD2360, 2STF1525, 2STF2280, 2STL1525, 2STN2340, 2STW100, 2STW200
Keywords - 2STBN15D100 pdf specs
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