2STBN15D100 Datasheet and Replacement
Type Designator: 2STBN15D100
SMD Transistor Code: BN15D100
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 70 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 750
Noise Figure, dB: -
Package: TO263
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2STBN15D100 Datasheet (PDF)
2stbn15d100.pdf

2STBN15D100Low voltage NPN power Darlington transistorFeatures Good hFE linearity High fT frequencyTAB Monolithic Darlington configuration with integrated antiparallel collector-emitter diode3Application1 Linear and switching industrial equipmentDPAKDescriptionThe device is manufactured in planar technology with base island layout and monolithic
2stbn15d100t4.pdf

2STBN15D100Low voltage NPN power Darlington transistorFeatures Good hFE linearity High fT frequencyTAB Monolithic Darlington configuration with integrated antiparallel collector-emitter diode3Application1 Linear and switching industrial equipmentDPAKDescriptionThe device is manufactured in planar technology with base island layout and monolithic
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: H643 | WTP882 | KT922D | 2SC5344S | KT339V | 2SC1838 | 2SA555
Keywords - 2STBN15D100 transistor datasheet
2STBN15D100 cross reference
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History: H643 | WTP882 | KT922D | 2SC5344S | KT339V | 2SC1838 | 2SA555



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