2STBN15D100 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2STBN15D100
SMD Transistor Code: BN15D100
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 70 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 750
Noise Figure, dB: -
Package: TO263
2STBN15D100 Transistor Equivalent Substitute - Cross-Reference Search
2STBN15D100 Datasheet (PDF)
2stbn15d100.pdf
2STBN15D100Low voltage NPN power Darlington transistorFeatures Good hFE linearity High fT frequencyTAB Monolithic Darlington configuration with integrated antiparallel collector-emitter diode3Application1 Linear and switching industrial equipmentDPAKDescriptionThe device is manufactured in planar technology with base island layout and monolithic
2stbn15d100t4.pdf
2STBN15D100Low voltage NPN power Darlington transistorFeatures Good hFE linearity High fT frequencyTAB Monolithic Darlington configuration with integrated antiparallel collector-emitter diode3Application1 Linear and switching industrial equipmentDPAKDescriptionThe device is manufactured in planar technology with base island layout and monolithic
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: TSC114ENND03 | 2STX1360
History: TSC114ENND03 | 2STX1360
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