SPT5008S1 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SPT5008S1
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 100 W
   Tensión colector-base (Vcb): 100 V
   Tensión colector-emisor (Vce): 80 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 10 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 40 MHz
   Capacitancia de salida (Cc): 275 pF
   Ganancia de corriente contínua (hfe): 45
   Paquete / Cubierta: SMD1

Búsqueda de reemplazo de transistor bipolar SPT5008S1

SPT5008S1 Datasheet (PDF)

7.1. Size:76K ssdi
spt5006 spt5008.pdf

SPT5006 and SPT5008 Series Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 10 AMPS DESIGNERS DATA SHEET 100 Volts Part Number / Ordering Information 1/ High Power - High Speed SPT5006 __ __ __ NPN Transistors SPT5008 __ __ __ Screening 2/ __ = Not

9.1. Size:5480K cn sps
spt50n65f1a1t8tl.pdf

SPT50N65F1A1T8TL650V /50A Trench Field Stop IGBT 650V Trench Field Stop IGBTs offer V 650 V CElow switching losses, high energy efficiency I 50 A Cand high avalanche ruggedness for motion control, solar application and welding machine. V I =50A 1.65 V CE(SAT) CFEATURES High breakdown voltage up to 650V forimproved reliability Trench-Stop Technology offering

9.2. Size:5494K cn sps
spt50n65f1at8tl.pdf

SPT50N65F1AT8TL650V /50A Trench Field Stop IGBT 650V Trench Field Stop IGBTs offer V 650 V CElow switching losses, high energy efficiency I 50 A Cand high avalanche ruggedness for motion control, solar application and welding machine. V I =50A 1.8 V CE(SAT) CFEATURES High breakdown voltage up to 650V forimproved reliability Trench-Stop Technology offering :

9.3. Size:1793K cn sptech
spt50n65f1a1.pdf

SPT50N65F1A1 650V /50A Trench Field Stop IGBT 650V Trench Field Stop IGBTs offer V 650 V CElow switching losses, high energy efficiency I 50 A Cand high avalanche ruggedness for motion control, solar application and welding machine. V I =50A 1.65 V CE(SAT) CFEATURES High breakdown voltage up to 650V forimproved reliability Trench-Stop Technology offering :

9.4. Size:1808K cn sptech
spt50n65f1a.pdf

SPT50N65F1A 650V /50A Trench Field Stop IGBT 650V Trench Field Stop IGBTs offer V 650 V CElow switching losses, high energy efficiency I 50 A Cand high avalanche ruggedness for motion control, solar application and welding machine. V I =50A 1.8 V CE(SAT) CFEATURES High breakdown voltage up to 650V forimproved reliability Trench-Stop Technology offering :

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SD733 | DDTC124XUA | 2SC181

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