SPT5008S1 Datasheet. Specs and Replacement

Type Designator: SPT5008S1  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 40 MHz

Collector Capacitance (Cc): 275 pF

Forward Current Transfer Ratio (hFE), MIN: 45

Noise Figure, dB: -

Package: SMD1

 SPT5008S1 Substitution

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SPT5008S1 datasheet

 7.1. Size:76K  ssdi

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SPT5008S1

SPT5006 and SPT5008 Series Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone (562) 404-4474 * Fax (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 10 AMPS DESIGNER S DATA SHEET 100 Volts Part Number / Ordering Information 1/ High Power - High Speed SPT5006 __ __ __ NPN Transistors SPT5008 __ __ __ Screening 2/ __ = Not... See More ⇒

 9.1. Size:5480K  cn sps

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SPT5008S1

SPT50N65F1A1T8TL 650V /50A Trench Field Stop IGBT 650V Trench Field Stop IGBTs offer V 650 V CE low switching losses, high energy efficiency I 50 A C and high avalanche ruggedness for motion control, solar application and welding machine. V I =50A 1.65 V CE(SAT) C FEATURES High breakdown voltage up to 650V for improved reliability Trench-Stop Technology offering ... See More ⇒

 9.2. Size:5494K  cn sps

 spt50n65f1at8tl.pdf pdf_icon

SPT5008S1

SPT50N65F1AT8TL 650V /50A Trench Field Stop IGBT 650V Trench Field Stop IGBTs offer V 650 V CE low switching losses, high energy efficiency I 50 A C and high avalanche ruggedness for motion control, solar application and welding machine. V I =50A 1.8 V CE(SAT) C FEATURES High breakdown voltage up to 650V for improved reliability Trench-Stop Technology offering ... See More ⇒

 9.3. Size:1793K  cn sptech

 spt50n65f1a1.pdf pdf_icon

SPT5008S1

SPT50N65F1A1 650V /50A Trench Field Stop IGBT 650V Trench Field Stop IGBTs offer V 650 V CE low switching losses, high energy efficiency I 50 A C and high avalanche ruggedness for motion control, solar application and welding machine. V I =50A 1.65 V CE(SAT) C FEATURES High breakdown voltage up to 650V for improved reliability Trench-Stop Technology offering ... See More ⇒

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Detailed specifications: SMA6511, SPT5006-3, SPT5006-61, SPT5006M, SPT5006S1, SPT5008-3, SPT5008-61, SPT5008M, 2N4401, SPT5330, MBT35200MT1, SMBT35200MT1G, MBT3904DW1T1G, MBT3904DW2T1G, SMBT3904DW1T1G, MBT3906DW1T1G, SMBT3906DW1T1G

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