MBT3904DW1T1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MBT3904DW1T1G
Código: MA
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 300 MHz
Capacitancia de salida (Cc): 4 pF
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta: SOT363
Búsqueda de reemplazo de transistor bipolar MBT3904DW1T1G
MBT3904DW1T1G Datasheet (PDF)
smbt3904dw1t1g mbt3904dw.pdf
MBT3904DW1T1G,MBT3904DW2T1G,SMBT3904DW1T1GDual General PurposeTransistorshttp://onsemi.comThe MBT3904DW1T1G and MBT3904DW2T1G devices are aspin-off of our popular SOT-23/SOT-323 three-leaded device. It isMARKINGdesigned for general purpose amplifier applications and is housed inDIAGRAMthe SOT-363 six-leaded surface mount package. By putting two6discrete devices in one
lmbt3904dw1t1g lmbt3904dw1t3g.pdf
LMBT3904DW1T1GS-LMBT3904DW1T1GGeneral Purpose Transistors NPN Silicon1. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC88(SOT-363) qualified and PPAP capable.Low VCE(sat), 0.4 VSimplifi
lmbt3904dw1t1g.pdf
LESHAN RADIO COMPANY, LTD.Dual General Purpose Transistors The LMBT3904DW1T1G device is a spinoff of our popularLMBT3904DW1T1GSOT23/SOT323 threeleaded device. It is designed for generalpurpose amplifier applications and is housed in the SOT363S-LMBT3904DW1T1Gsixleaded surface mount package. By putting two discrete devicesin one package , this device is ideal fo
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