MBT3904DW1T1G
Datasheet, Equivalent, Cross Reference Search
Type Designator: MBT3904DW1T1G
SMD Transistor Code: MA
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.15
W
Maximum Collector-Base Voltage |Vcb|: 60
V
Maximum Collector-Emitter Voltage |Vce|: 40
V
Maximum Emitter-Base Voltage |Veb|: 6
V
Maximum Collector Current |Ic max|: 0.2
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 300
MHz
Collector Capacitance (Cc): 4
pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package:
SOT363
MBT3904DW1T1G
Transistor Equivalent Substitute - Cross-Reference Search
MBT3904DW1T1G
Datasheet (PDF)
0.1. Size:908K onsemi
smbt3904dw1t1g mbt3904dw.pdf
MBT3904DW1T1G,MBT3904DW2T1G,SMBT3904DW1T1GDual General PurposeTransistorshttp://onsemi.comThe MBT3904DW1T1G and MBT3904DW2T1G devices are aspin-off of our popular SOT-23/SOT-323 three-leaded device. It isMARKINGdesigned for general purpose amplifier applications and is housed inDIAGRAMthe SOT-363 six-leaded surface mount package. By putting two6discrete devices in one
0.2. Size:554K lrc
lmbt3904dw1t1g lmbt3904dw1t3g.pdf
LMBT3904DW1T1GS-LMBT3904DW1T1GGeneral Purpose Transistors NPN Silicon1. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC88(SOT-363) qualified and PPAP capable.Low VCE(sat), 0.4 VSimplifi
0.3. Size:506K lrc
lmbt3904dw1t1g.pdf
LESHAN RADIO COMPANY, LTD.Dual General Purpose Transistors The LMBT3904DW1T1G device is a spinoff of our popularLMBT3904DW1T1GSOT23/SOT323 threeleaded device. It is designed for generalpurpose amplifier applications and is housed in the SOT363S-LMBT3904DW1T1Gsixleaded surface mount package. By putting two discrete devicesin one package , this device is ideal fo
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