2SD1499-P Todos los transistores

 

2SD1499-P Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD1499-P

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 2 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 100 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 20 MHz

Capacitancia de salida (Cc): 90 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: TO220F

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2SD1499-P datasheet

 ..1. Size:439K  mcc
2sd1499-p.pdf pdf_icon

2SD1499-P

MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth 2SD1499-P Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Epoxy meets UL 94 V-0 flammability rating NPN Silicon Moisure Sensitivity Level 1 Wide Safe Operation Area Power Transistors Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates RoHS Com

 7.1. Size:44K  panasonic
2sd1499.pdf pdf_icon

2SD1499-P

Power Transistors 2SD1499 Silicon NPN triple diffusion planar type For high power amplification Unit mm Complementary to 2SB1063 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features Extremely satisfactory linearity of the forward current transfer 3.1 0.1 ratio hFE Wide area of safe operation (ASO) High transition frequency fT Full-pack package which can be installed to the heat

 7.2. Size:187K  lge
2sd1499.pdf pdf_icon

2SD1499-P

2SD1499(NPN) TO-220F Bipolar Transistors TO-220F 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features Extremely satisfactory linearity of the forward current transfer ratio hFE Wide safe operation area High transition frequency fT Full-pack package which can be installed to the heat sink with one screw. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter

 7.3. Size:215K  inchange semiconductor
2sd1499.pdf pdf_icon

2SD1499-P

isc Silicon NPN Power Transistor 2SD1499 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V (Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SB1063 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V

Otros transistores... 2SD1899-M , 2SD1899-Z , 2SD1005-U , 2SD1005-V , 2SD1005-W , 2SD1164-Z , 2SD1484KFRA , 2SD1949FRA , 2SC5200 , 2SD1583-Z , 2SD1584-Z , 2SD1781KFRA , 2SD1781KGP , 2SD1782KFRA , 2SD1664GP , 2SD1664P , 2SD1664Q .

History: PZTA92T1G | SK9139 | PZTA42T1G | BC440-5 | SK9142 | BC439C

 

 

 

 

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