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2SD1499-P . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SD1499-P
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 2 W
   Tensión colector-base (Vcb): 100 V
   Tensión colector-emisor (Vce): 100 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 20 MHz
   Capacitancia de salida (Cc): 90 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: TO220F
 

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2SD1499-P Datasheet (PDF)

 ..1. Size:439K  mcc
 2sd1499-p.pdf pdf_icon

2SD1499-P

MCCTMMicro Commercial Components20736 Marilla Street Chatsworth2SD1499-PMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Epoxy meets UL 94 V-0 flammability ratingNPN Silicon Moisure Sensitivity Level 1 Wide Safe Operation Area Power Transistors Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates RoHS Com

 7.1. Size:44K  panasonic
 2sd1499.pdf pdf_icon

2SD1499-P

Power Transistors2SD1499Silicon NPN triple diffusion planar typeFor high power amplificationUnit: mmComplementary to 2SB106310.0 0.2 4.2 0.25.5 0.2 2.7 0.2FeaturesExtremely satisfactory linearity of the forward current transfer 3.1 0.1ratio hFEWide area of safe operation (ASO)High transition frequency fTFull-pack package which can be installed to the heat

 7.2. Size:187K  lge
 2sd1499.pdf pdf_icon

2SD1499-P

2SD1499(NPN)TO-220F Bipolar TransistorsTO-220F1. BASE 2. COLLECTOR 3. EMITTER 1 2 3Features Extremely satisfactory linearity of the forward current transferratio hFE Wide safe operation area High transition frequency fT Full-pack package which can be installed to the heat sink with one screw. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter

 7.3. Size:215K  inchange semiconductor
 2sd1499.pdf pdf_icon

2SD1499-P

isc Silicon NPN Power Transistor 2SD1499DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V (Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SB1063Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

MOSTRAR MÁS

Otros transistores... 2SD1899-M , 2SD1899-Z , 2SD1005-U , 2SD1005-V , 2SD1005-W , 2SD1164-Z , 2SD1484KFRA , 2SD1949FRA , BD139 , 2SD1583-Z , 2SD1584-Z , 2SD1781KFRA , 2SD1781KGP , 2SD1782KFRA , 2SD1664GP , 2SD1664P , 2SD1664Q .

 

 
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