All Transistors. 2SD1499-P Datasheet

 

2SD1499-P Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SD1499-P
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 2 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 20 MHz
   Collector Capacitance (Cc): 90 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO220F

 2SD1499-P Transistor Equivalent Substitute - Cross-Reference Search

   

2SD1499-P Datasheet (PDF)

 ..1. Size:439K  mcc
2sd1499-p.pdf

2SD1499-P
2SD1499-P

MCCTMMicro Commercial Components20736 Marilla Street Chatsworth2SD1499-PMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Epoxy meets UL 94 V-0 flammability ratingNPN Silicon Moisure Sensitivity Level 1 Wide Safe Operation Area Power Transistors Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates RoHS Com

 7.1. Size:44K  panasonic
2sd1499.pdf

2SD1499-P
2SD1499-P

Power Transistors2SD1499Silicon NPN triple diffusion planar typeFor high power amplificationUnit: mmComplementary to 2SB106310.0 0.2 4.2 0.25.5 0.2 2.7 0.2FeaturesExtremely satisfactory linearity of the forward current transfer 3.1 0.1ratio hFEWide area of safe operation (ASO)High transition frequency fTFull-pack package which can be installed to the heat

 7.2. Size:187K  lge
2sd1499.pdf

2SD1499-P
2SD1499-P

2SD1499(NPN)TO-220F Bipolar TransistorsTO-220F1. BASE 2. COLLECTOR 3. EMITTER 1 2 3Features Extremely satisfactory linearity of the forward current transferratio hFE Wide safe operation area High transition frequency fT Full-pack package which can be installed to the heat sink with one screw. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter

 7.3. Size:215K  inchange semiconductor
2sd1499.pdf

2SD1499-P
2SD1499-P

isc Silicon NPN Power Transistor 2SD1499DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V (Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SB1063Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

Datasheet: HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , 2222A , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .

History: 2SC1006

 

 
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