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BULD39DT4 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BULD39DT4
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 35 W
   Tensión colector-base (Vcb): 850 V
   Tensión colector-emisor (Vce): 450 V
   Tensión emisor-base (Veb): 9 V
   Corriente del colector DC máxima (Ic): 4 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 4
   Paquete / Cubierta: TO252
 

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BULD39DT4 Datasheet (PDF)

 ..1. Size:246K  st
buld39dt4 buld39d-1.pdf pdf_icon

BULD39DT4

BULD39D-1BULD39DT4High Voltage Fast-SwitchingNPN Power TransistorGeneral features NPN transistor High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed3321 High ruggedness1 Surface-mounting DPAK (TO-252) power IPAK DPAKpackage in tape & reel (suffix T4) TO-251 TO-252 Through-hole IPAK (

 7.1. Size:276K  st
buld39d-1.pdf pdf_icon

BULD39DT4

www.DataSheet4U.comBULD39D-1BULD39DT4High Voltage Fast-SwitchingNPN Power TransistorGeneral features NPN transistor High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed3321 High ruggedness1 Surface-mounting DPAK (TO-252) power IPAK DPAKpackage in tape & reel (suffix T4) TO-251 TO-252

 9.1. Size:241K  st
buld3n7t4.pdf pdf_icon

BULD39DT4

BULD3N7T4Medium voltage fast-switching NPN Power TransistorGeneral features Medium voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed3 In compliance with the 2002/93/EC European Directive1DPAKDescriptionThe device is manufactured using high voltageMulti-Epitaxial Planar technol

 9.2. Size:250K  st
buld3p5t4.pdf pdf_icon

BULD39DT4

BULD3P5T4Medium voltage fast-switching PNP Power TransistorGeneral features Medium voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed3 In compliance with the 2002/93/EC European Directive1DPAKDescriptionThe device is manufactured using high voltageMulti-Epitaxial Planar technol

Otros transistores... 2SD1664R , BU406A8 , BU508B , BU508C , BU941A , BU941B , BU941ZTFP , BULD118D-1 , TIP3055 , BULK128D-B , BUL741FP , BUL742 , BUL743 , BUL98 , BUL1102EFP , BUL123S , BUL128D .

History: BCW98C | 2SC1005A | PBSS5330X | 2SD949 | DDTA113ZUA | BFR51

 

 
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