BULD39DT4 Todos los transistores

 

BULD39DT4 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BULD39DT4
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 35 W
   Tensión colector-base (Vcb): 850 V
   Tensión colector-emisor (Vce): 450 V
   Tensión emisor-base (Veb): 9 V
   Corriente del colector DC máxima (Ic): 4 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 4
   Paquete / Cubierta: TO252
     - Selección de transistores por parámetros

 

BULD39DT4 Datasheet (PDF)

 ..1. Size:246K  st
buld39dt4 buld39d-1.pdf pdf_icon

BULD39DT4

BULD39D-1BULD39DT4High Voltage Fast-SwitchingNPN Power TransistorGeneral features NPN transistor High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed3321 High ruggedness1 Surface-mounting DPAK (TO-252) power IPAK DPAKpackage in tape & reel (suffix T4) TO-251 TO-252 Through-hole IPAK (

 7.1. Size:276K  st
buld39d-1.pdf pdf_icon

BULD39DT4

www.DataSheet4U.comBULD39D-1BULD39DT4High Voltage Fast-SwitchingNPN Power TransistorGeneral features NPN transistor High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed3321 High ruggedness1 Surface-mounting DPAK (TO-252) power IPAK DPAKpackage in tape & reel (suffix T4) TO-251 TO-252

 9.1. Size:241K  st
buld3n7t4.pdf pdf_icon

BULD39DT4

BULD3N7T4Medium voltage fast-switching NPN Power TransistorGeneral features Medium voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed3 In compliance with the 2002/93/EC European Directive1DPAKDescriptionThe device is manufactured using high voltageMulti-Epitaxial Planar technol

 9.2. Size:250K  st
buld3p5t4.pdf pdf_icon

BULD39DT4

BULD3P5T4Medium voltage fast-switching PNP Power TransistorGeneral features Medium voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed3 In compliance with the 2002/93/EC European Directive1DPAKDescriptionThe device is manufactured using high voltageMulti-Epitaxial Planar technol

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: NB221FG | KRC104 | KT657V-2 | BCW65ALT1G | 2SA1539 | 2SC4605 | 2N5980

 

 
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