BULD39DT4 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BULD39DT4  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 35 W

Tensión colector-base (Vcb): 850 V

Tensión colector-emisor (Vce): 450 V

Tensión emisor-base (Veb): 9 V

Corriente del colector DC máxima (Ic): 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 4

Encapsulados: TO252

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BULD39DT4 datasheet

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 buld39dt4 buld39d-1.pdf pdf_icon

BULD39DT4

BULD39D-1 BULD39DT4 High Voltage Fast-Switching NPN Power Transistor General features NPN transistor High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed 3 3 2 1 High ruggedness 1 Surface-mounting DPAK (TO-252) power IPAK DPAK package in tape & reel (suffix T4 ) TO-251 TO-252 Through-hole IPAK (

 7.1. Size:276K  st
 buld39d-1.pdf pdf_icon

BULD39DT4

 9.1. Size:241K  st
 buld3n7t4.pdf pdf_icon

BULD39DT4

BULD3N7T4 Medium voltage fast-switching NPN Power Transistor General features Medium voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed 3 In compliance with the 2002/93/EC European Directive 1 DPAK Description The device is manufactured using high voltage Multi-Epitaxial Planar technol

 9.2. Size:250K  st
 buld3p5t4.pdf pdf_icon

BULD39DT4

BULD3P5T4 Medium voltage fast-switching PNP Power Transistor General features Medium voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed 3 In compliance with the 2002/93/EC European Directive 1 DPAK Description The device is manufactured using high voltage Multi-Epitaxial Planar technol

MOSTRAR MÁS

Otros transistores... 2SD1664R, BU406A8, BU508B, BU508C, BU941A, BU941B, BU941ZTFP, BULD118D-1, A1015, BULK128D-B, BUL741FP, BUL742, BUL743, BUL98, BUL1102EFP, BUL123S, BUL128D