All Transistors. BULD39DT4 Datasheet

 

BULD39DT4 Datasheet and Replacement


   Type Designator: BULD39DT4
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 35 W
   Maximum Collector-Base Voltage |Vcb|: 850 V
   Maximum Collector-Emitter Voltage |Vce|: 450 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 4
   Noise Figure, dB: -
   Package: TO252
      - BJT Cross-Reference Search

   

BULD39DT4 Datasheet (PDF)

 ..1. Size:246K  st
 buld39dt4 buld39d-1.pdf pdf_icon

BULD39DT4

BULD39D-1BULD39DT4High Voltage Fast-SwitchingNPN Power TransistorGeneral features NPN transistor High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed3321 High ruggedness1 Surface-mounting DPAK (TO-252) power IPAK DPAKpackage in tape & reel (suffix T4) TO-251 TO-252 Through-hole IPAK (

 7.1. Size:276K  st
 buld39d-1.pdf pdf_icon

BULD39DT4

www.DataSheet4U.comBULD39D-1BULD39DT4High Voltage Fast-SwitchingNPN Power TransistorGeneral features NPN transistor High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed3321 High ruggedness1 Surface-mounting DPAK (TO-252) power IPAK DPAKpackage in tape & reel (suffix T4) TO-251 TO-252

 9.1. Size:241K  st
 buld3n7t4.pdf pdf_icon

BULD39DT4

BULD3N7T4Medium voltage fast-switching NPN Power TransistorGeneral features Medium voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed3 In compliance with the 2002/93/EC European Directive1DPAKDescriptionThe device is manufactured using high voltageMulti-Epitaxial Planar technol

 9.2. Size:250K  st
 buld3p5t4.pdf pdf_icon

BULD39DT4

BULD3P5T4Medium voltage fast-switching PNP Power TransistorGeneral features Medium voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed3 In compliance with the 2002/93/EC European Directive1DPAKDescriptionThe device is manufactured using high voltageMulti-Epitaxial Planar technol

SHOW MORE

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: GT402E | 2SB1144S | BF420A | 2N2473 | BTB1424AT3 | 2N3183 | MM4019

Keywords - BULD39DT4 transistor datasheet

 BULD39DT4 cross reference
 BULD39DT4 equivalent finder
 BULD39DT4 lookup
 BULD39DT4 substitution
 BULD39DT4 replacement

 

 
Back to Top

 


 
.