BULD39DT4 Datasheet. Specs and Replacement
Type Designator: BULD39DT4 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 35 W
Maximum Collector-Base Voltage |Vcb|: 850 V
Maximum Collector-Emitter Voltage |Vce|: 450 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 4
Package: TO252
BULD39DT4 Substitution
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BULD39DT4 datasheet
BULD39D-1 BULD39DT4 High Voltage Fast-Switching NPN Power Transistor General features NPN transistor High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed 3 3 2 1 High ruggedness 1 Surface-mounting DPAK (TO-252) power IPAK DPAK package in tape & reel (suffix T4 ) TO-251 TO-252 Through-hole IPAK (... See More ⇒
BULD3N7T4 Medium voltage fast-switching NPN Power Transistor General features Medium voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed 3 In compliance with the 2002/93/EC European Directive 1 DPAK Description The device is manufactured using high voltage Multi-Epitaxial Planar technol... See More ⇒
BULD3P5T4 Medium voltage fast-switching PNP Power Transistor General features Medium voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed 3 In compliance with the 2002/93/EC European Directive 1 DPAK Description The device is manufactured using high voltage Multi-Epitaxial Planar technol... See More ⇒
Detailed specifications: 2SD1664R, BU406A8, BU508B, BU508C, BU941A, BU941B, BU941ZTFP, BULD118D-1, A1015, BULK128D-B, BUL741FP, BUL742, BUL743, BUL98, BUL1102EFP, BUL123S, BUL128D
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