Справочник транзисторов. BULD39DT4

 

Биполярный транзистор BULD39DT4 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: BULD39DT4
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 35 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 850 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 450 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 9 V
   Макcимальный постоянный ток коллектора (Ic): 4 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 4
   Корпус транзистора: TO252

 Аналоги (замена) для BULD39DT4

 

 

BULD39DT4 Datasheet (PDF)

 ..1. Size:246K  st
buld39dt4 buld39d-1.pdf

BULD39DT4
BULD39DT4

BULD39D-1BULD39DT4High Voltage Fast-SwitchingNPN Power TransistorGeneral features NPN transistor High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed3321 High ruggedness1 Surface-mounting DPAK (TO-252) power IPAK DPAKpackage in tape & reel (suffix T4) TO-251 TO-252 Through-hole IPAK (

 7.1. Size:276K  st
buld39d-1.pdf

BULD39DT4
BULD39DT4

www.DataSheet4U.comBULD39D-1BULD39DT4High Voltage Fast-SwitchingNPN Power TransistorGeneral features NPN transistor High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed3321 High ruggedness1 Surface-mounting DPAK (TO-252) power IPAK DPAKpackage in tape & reel (suffix T4) TO-251 TO-252

 9.1. Size:241K  st
buld3n7t4.pdf

BULD39DT4
BULD39DT4

BULD3N7T4Medium voltage fast-switching NPN Power TransistorGeneral features Medium voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed3 In compliance with the 2002/93/EC European Directive1DPAKDescriptionThe device is manufactured using high voltageMulti-Epitaxial Planar technol

 9.2. Size:250K  st
buld3p5t4.pdf

BULD39DT4
BULD39DT4

BULD3P5T4Medium voltage fast-switching PNP Power TransistorGeneral features Medium voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed3 In compliance with the 2002/93/EC European Directive1DPAKDescriptionThe device is manufactured using high voltageMulti-Epitaxial Planar technol

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: MQ1613R | BU2523DX

 

 
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