BUL66B Todos los transistores

 

BUL66B . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUL66B
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 25 W
   Tensión colector-base (Vcb): 200 V
   Tensión colector-emisor (Vce): 120 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 8 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 20 MHz
   Capacitancia de salida (Cc): 100 pF
   Ganancia de corriente contínua (hfe): 25
   Paquete / Cubierta: TO251
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BUL66B Datasheet (PDF)

 ..1. Size:14K  semelab
 bul66b.pdf pdf_icon

BUL66B

BUL66BSEMELABADVANCEDMECHANICAL DATADISTRIBUTED BASE DESIGNDimensions in mmHIGH VOLTAGE2.18 (0.086)2.44 (0.096)6.40 (0.252)HIGH SPEED NPN6.78 (0.267)5.21 (0.205) 0.84 (0.033)5.46 (0.215) 0.94 (0.037)SILICON POWER TRANSISTOR1.09 (0.043)1.30 (0.051)Designed for use in 5.97 (0.235)6.22 (0.245)electronic ballast applications1 2 3 SEMEFAB DESIGNED AND

 9.1. Size:14K  semelab
 bul66a.pdf pdf_icon

BUL66B

BUL66ASEMELABADVANCEDMECHANICAL DATADISTRIBUTED BASE DESIGNDimensions in mmHIGH VOLTAGE2.18 (0.086)2.44 (0.096)6.40 (0.252)HIGH SPEED NPN6.78 (0.267)5.21 (0.205) 0.84 (0.033)5.46 (0.215) 0.94 (0.037)SILICON POWER TRANSISTOR1.09 (0.043)1.30 (0.051)Designed for use in 5.97 (0.235)6.22 (0.245)electronic ballast applications1 2 3 SEMEFAB DESIGNED AND

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SB1119T | TD13005SMD | KTB817B | BLY81 | NKT674F | GI2716 | 2SB648A

 

 
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