BUL66B Datasheet. Specs and Replacement
Type Designator: BUL66B 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 20 MHz
Collector Capacitance (Cc): 100 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO251
BUL66B Substitution
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BUL66B datasheet
BUL66B SEME LAB ADVANCED MECHANICAL DATA DISTRIBUTED BASE DESIGN Dimensions in mm HIGH VOLTAGE 2.18 (0.086) 2.44 (0.096) 6.40 (0.252) HIGH SPEED NPN 6.78 (0.267) 5.21 (0.205) 0.84 (0.033) 5.46 (0.215) 0.94 (0.037) SILICON POWER TRANSISTOR 1.09 (0.043) 1.30 (0.051) Designed for use in 5.97 (0.235) 6.22 (0.245) electronic ballast applications 1 2 3 SEMEFAB DESIGNED AND... See More ⇒
BUL66A SEME LAB ADVANCED MECHANICAL DATA DISTRIBUTED BASE DESIGN Dimensions in mm HIGH VOLTAGE 2.18 (0.086) 2.44 (0.096) 6.40 (0.252) HIGH SPEED NPN 6.78 (0.267) 5.21 (0.205) 0.84 (0.033) 5.46 (0.215) 0.94 (0.037) SILICON POWER TRANSISTOR 1.09 (0.043) 1.30 (0.051) Designed for use in 5.97 (0.235) 6.22 (0.245) electronic ballast applications 1 2 3 SEMEFAB DESIGNED AND... See More ⇒
Detailed specifications: BUL416T, BUL45D2G, BUL49DFP, BUL64A, BUL64B, BUL65A, BUL65B, BUL66A, 2SC1815, BUL68A, BUL68B, BUL70A, BUL72A, BUL72B, BUL52ASMD, BUL52BSMD, BUL53ASMD
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