BUL72B Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUL72B  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 2 W

Tensión colector-base (Vcb): 200 V

Tensión colector-emisor (Vce): 100 V

Tensión emisor-base (Veb): 10 V

Corriente del colector DC máxima (Ic): 8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 20 MHz

Capacitancia de salida (Cc): 44 pF

Ganancia de corriente contínua (hFE): 25

Encapsulados: SOT223 LCC4

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BUL72B datasheet

 ..1. Size:14K  semelab
 bul72b.pdf pdf_icon

BUL72B

BUL72B SEME LAB ADVANCED MECHANICAL DATA DISTRIBUTED BASE DESIGN Dimensions in mm HIGH VOLTAGE 0.32 0.24 HIGH SPEED NPN SILICON POWER TRANSISTOR 0.10 0.02 16 13 max. Designed for use in 1.70 electronic ballast applications max. 10 max. SEMEFAB DESIGNED AND DIFFUSED DIE 6.7 6.3 3.1 HIGH VOLTAGE 2.9 FAST SWITCHING 4 HIGH ENERGY RATING 3.7 7.3

 ..2. Size:16K  semelab
 bul72b lcc4.pdf pdf_icon

BUL72B

BUL72B - LCC4 SEME LAB ADVANCED MECHANICAL DATA DISTRIBUTED BASE DESIGN Dimensions in mm HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 9.14 (0.360) 1.27 (0.050) 8.64 (0.340) 1.07 (0.040) 2.16 (0.085) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040) 11 17 SEMEFAB DESIGNED AND DIFFUSED DIE 10 18 7.62 (0.300) 7.12 (0.280) 9 1 HIGH VOLTAGE 0.76 (0.030) 8 2 0.51

 9.1. Size:200K  st
 bulb7216 bul7216.pdf pdf_icon

BUL72B

BULB7216 BUL7216 High voltage fast-switching NPN power transistor Features Low spread of dynamic parameters High voltage capability Minimum lot-to-lot spread for reliable operation 3 2 3 1 Very high switching speed 2 1 I2PAK TO-220 Applications Electronic ballast for fluorescent lighting (277 V 3 1 push-pull and 347 V half bridge topoligies) D2PAK Des

 9.2. Size:14K  semelab
 bul72a.pdf pdf_icon

BUL72B

BUL72A SEME LAB ADVANCED MECHANICAL DATA DISTRIBUTED BASE DESIGN Dimensions in mm HIGH VOLTAGE 0.32 0.24 HIGH SPEED NPN SILICON POWER TRANSISTOR 0.10 0.02 16 13 max. Designed for use in 1.70 electronic ballast applications max. 10 max. SEMEFAB DESIGNED AND DIFFUSED DIE 6.7 6.3 3.1 HIGH VOLTAGE 2.9 FAST SWITCHING 4 HIGH ENERGY RATING 3.7 7.3

MOSTRAR MÁS

Otros transistores... BUL65A, BUL65B, BUL66A, BUL66B, BUL68A, BUL68B, BUL70A, BUL72A, BC546, BUL52ASMD, BUL52BSMD, BUL53ASMD, BUL53B-SM, BUL53BSMD, BUL54A-SM, BUL54ASMD, BUL54A-T257F