BUL72B Datasheet. Specs and Replacement

Type Designator: BUL72B  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 2 W

Maximum Collector-Base Voltage |Vcb|: 200 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 20 MHz

Collector Capacitance (Cc): 44 pF

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: SOT223 LCC4

 BUL72B Substitution

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BUL72B datasheet

 ..1. Size:14K  semelab

bul72b.pdf pdf_icon

BUL72B

BUL72B SEME LAB ADVANCED MECHANICAL DATA DISTRIBUTED BASE DESIGN Dimensions in mm HIGH VOLTAGE 0.32 0.24 HIGH SPEED NPN SILICON POWER TRANSISTOR 0.10 0.02 16 13 max. Designed for use in 1.70 electronic ballast applications max. 10 max. SEMEFAB DESIGNED AND DIFFUSED DIE 6.7 6.3 3.1 HIGH VOLTAGE 2.9 FAST SWITCHING 4 HIGH ENERGY RATING 3.7 7.3... See More ⇒

 ..2. Size:16K  semelab

bul72b lcc4.pdf pdf_icon

BUL72B

BUL72B - LCC4 SEME LAB ADVANCED MECHANICAL DATA DISTRIBUTED BASE DESIGN Dimensions in mm HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 9.14 (0.360) 1.27 (0.050) 8.64 (0.340) 1.07 (0.040) 2.16 (0.085) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040) 11 17 SEMEFAB DESIGNED AND DIFFUSED DIE 10 18 7.62 (0.300) 7.12 (0.280) 9 1 HIGH VOLTAGE 0.76 (0.030) 8 2 0.51 ... See More ⇒

 9.1. Size:200K  st

bulb7216 bul7216.pdf pdf_icon

BUL72B

BULB7216 BUL7216 High voltage fast-switching NPN power transistor Features Low spread of dynamic parameters High voltage capability Minimum lot-to-lot spread for reliable operation 3 2 3 1 Very high switching speed 2 1 I2PAK TO-220 Applications Electronic ballast for fluorescent lighting (277 V 3 1 push-pull and 347 V half bridge topoligies) D2PAK Des... See More ⇒

 9.2. Size:14K  semelab

bul72a.pdf pdf_icon

BUL72B

BUL72A SEME LAB ADVANCED MECHANICAL DATA DISTRIBUTED BASE DESIGN Dimensions in mm HIGH VOLTAGE 0.32 0.24 HIGH SPEED NPN SILICON POWER TRANSISTOR 0.10 0.02 16 13 max. Designed for use in 1.70 electronic ballast applications max. 10 max. SEMEFAB DESIGNED AND DIFFUSED DIE 6.7 6.3 3.1 HIGH VOLTAGE 2.9 FAST SWITCHING 4 HIGH ENERGY RATING 3.7 7.3... See More ⇒

Detailed specifications: BUL65A, BUL65B, BUL66A, BUL66B, BUL68A, BUL68B, BUL70A, BUL72A, BC546, BUL52ASMD, BUL52BSMD, BUL53ASMD, BUL53B-SM, BUL53BSMD, BUL54A-SM, BUL54ASMD, BUL54A-T257F

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