BUL53B-SM . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BUL53B-SM
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 60 W
   Tensión colector-base (Vcb): 500 V
   Tensión colector-emisor (Vce): 250 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 12 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 20 MHz
   Capacitancia de salida (Cc): 200 pF
   Ganancia de corriente contínua (hfe): 20
   Paquete / Cubierta: TO276AB

Búsqueda de reemplazo de transistor bipolar BUL53B-SM

BUL53B-SM Datasheet (PDF)

..1. Size:28K semelab
bul53b-sm.pdf

BUL53BSMSEMELABADVANCED DISTRIBUTEDMECHANICAL DATABASE DESIGNHIGH VOLTAGE, HIGH SPEED NPNSILICON POWER TRANSISTOR CERAMIC SURFACE MOUNT PACKAGE FULL MIL/AEROSPACE TEMPERATURE11.52.0 RANGE0.253.5 3.5 3.0 SCREENING OPTIONS FOR MILITARY ANDSPACE APPLICATIONS SEMEFAB DESIGNED AND DIFFUSED DIE1 3 HIGH VOLTAGE (VCBO = 800V) FAST SWITCHING (tf

8.1. Size:20K semelab
bul53bsmd.pdf

BUL53BSMDADVANCED DISTRIBUTEDMECHANICAL DATABASE DESIGNDimensions in mmHIGH VOLTAGE, HIGH SPEED NPNSILICON POWER TRANSISTOR CERAMIC SURFACE MOUNT PACKAGE FULL MIL/AEROSPACE TEMPERATURERANGE SCREENING OPTIONS FOR MILITARY ANDSPACE APPLICATIONS SEMEFAB DESIGNED

9.1. Size:10K semelab
bul53asmd.pdf

BUL53ASMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 300V IC = 10A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: D39C1-3 | TSC5304DCP

Liste

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