BUL53B-SM Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUL53B-SM  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 60 W

Tensión colector-base (Vcb): 500 V

Tensión colector-emisor (Vce): 250 V

Tensión emisor-base (Veb): 10 V

Corriente del colector DC máxima (Ic): 12 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 20 MHz

Capacitancia de salida (Cc): 200 pF

Ganancia de corriente contínua (hFE): 20

Encapsulados: TO276AB

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BUL53B-SM datasheet

 ..1. Size:28K  semelab
 bul53b-sm.pdf pdf_icon

BUL53B-SM

BUL53B SM SEME LAB ADVANCED DISTRIBUTED MECHANICAL DATA BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR CERAMIC SURFACE MOUNT PACKAGE FULL MIL/AEROSPACE TEMPERATURE 11.5 2.0 RANGE 0.25 3.5 3.5 3.0 SCREENING OPTIONS FOR MILITARY AND SPACE APPLICATIONS SEMEFAB DESIGNED AND DIFFUSED DIE 1 3 HIGH VOLTAGE (VCBO = 800V) FAST SWITCHING (tf

 8.1. Size:20K  semelab
 bul53bsmd.pdf pdf_icon

BUL53B-SM

BUL53BSMD ADVANCED DISTRIBUTED MECHANICAL DATA BASE DESIGN Dimensions in mm HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR CERAMIC SURFACE MOUNT PACKAGE FULL MIL/AEROSPACE TEMPERATURE RANGE SCREENING OPTIONS FOR MILITARY AND SPACE APPLICATIONS SEMEFAB DESIGNED

 9.1. Size:10K  semelab
 bul53asmd.pdf pdf_icon

BUL53B-SM

BUL53ASMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 300V IC = 10A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26

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