BUL53B-SM Datasheet. Specs and Replacement

Type Designator: BUL53B-SM  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 60 W

Maximum Collector-Base Voltage |Vcb|: 500 V

Maximum Collector-Emitter Voltage |Vce|: 250 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 12 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 20 MHz

Collector Capacitance (Cc): 200 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO276AB

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BUL53B-SM datasheet

 ..1. Size:28K  semelab

 bul53b-sm.pdf pdf_icon

BUL53B-SM

BUL53B SM SEME LAB ADVANCED DISTRIBUTED MECHANICAL DATA BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR CERAMIC SURFACE MOUNT PACKAGE FULL MIL/AEROSPACE TEMPERATURE 11.5 2.0 RANGE 0.25 3.5 3.5 3.0 SCREENING OPTIONS FOR MILITARY AND SPACE APPLICATIONS SEMEFAB DESIGNED AND DIFFUSED DIE 1 3 HIGH VOLTAGE (VCBO = 800V) FAST SWITCHING (tf... See More ⇒

 8.1. Size:20K  semelab

 bul53bsmd.pdf pdf_icon

BUL53B-SM

BUL53BSMD ADVANCED DISTRIBUTED MECHANICAL DATA BASE DESIGN Dimensions in mm HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR CERAMIC SURFACE MOUNT PACKAGE FULL MIL/AEROSPACE TEMPERATURE RANGE SCREENING OPTIONS FOR MILITARY AND SPACE APPLICATIONS SEMEFAB DESIGNED ... See More ⇒

 9.1. Size:10K  semelab

 bul53asmd.pdf pdf_icon

BUL53B-SM

BUL53ASMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 300V IC = 10A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 ... See More ⇒

Detailed specifications: BUL68A, BUL68B, BUL70A, BUL72A, BUL72B, BUL52ASMD, BUL52BSMD, BUL53ASMD, BC558, BUL53BSMD, BUL54A-SM, BUL54ASMD, BUL54A-T257F, BUL54A-TO5, BUL54BSMD, TIP36CP, BUL5555

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