BUL53B-SM Datasheet, Equivalent, Cross Reference Search
Type Designator: BUL53B-SM
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 500 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 20 MHz
Collector Capacitance (Cc): 200 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO276AB
BUL53B-SM Transistor Equivalent Substitute - Cross-Reference Search
BUL53B-SM Datasheet (PDF)
bul53b-sm.pdf
BUL53BSMSEMELABADVANCED DISTRIBUTEDMECHANICAL DATABASE DESIGNHIGH VOLTAGE, HIGH SPEED NPNSILICON POWER TRANSISTOR CERAMIC SURFACE MOUNT PACKAGE FULL MIL/AEROSPACE TEMPERATURE11.52.0 RANGE0.253.5 3.5 3.0 SCREENING OPTIONS FOR MILITARY ANDSPACE APPLICATIONS SEMEFAB DESIGNED AND DIFFUSED DIE1 3 HIGH VOLTAGE (VCBO = 800V) FAST SWITCHING (tf
bul53bsmd.pdf
BUL53BSMDADVANCED DISTRIBUTEDMECHANICAL DATABASE DESIGNDimensions in mmHIGH VOLTAGE, HIGH SPEED NPNSILICON POWER TRANSISTOR CERAMIC SURFACE MOUNT PACKAGE FULL MIL/AEROSPACE TEMPERATURERANGE SCREENING OPTIONS FOR MILITARY ANDSPACE APPLICATIONS SEMEFAB DESIGNED
bul53asmd.pdf
BUL53ASMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 300V IC = 10A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: MJ3000
