BUL54ASMD Todos los transistores

 

BUL54ASMD . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUL54ASMD
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 35 W
   Tensión colector-base (Vcb): 1000 V
   Tensión colector-emisor (Vce): 500 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 2 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 20 MHz
   Capacitancia de salida (Cc): 20 pF
   Ganancia de corriente contínua (hfe): 12
   Paquete / Cubierta: TO276AB
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BUL54ASMD Datasheet (PDF)

 ..1. Size:20K  semelab
 bul54asmd.pdf pdf_icon

BUL54ASMD

BUL54ASMDADVANCEDMECHANICAL DATADISTRIBUTED BASE DESIGNDimensions in mmHIGH VOLTAGEHIGH SPEED NPN SILICON POWER TRANSISTOR SEMEFAB DESIGNED AND DIFFUSED DIEHIGH VOLTAGE FAST SWITCHING (tf = 40ns)EXCEPTIONAL HIGH TEMPERATURE PERFORMANCE HIGH ENERGY RATINGE

 8.1. Size:15K  semelab
 bul54a-sm.pdf pdf_icon

BUL54ASMD

BUL54ASMSEMELABADVANCEDMECHANICAL DATADISTRIBUTED BASE DESIGNDimensions in mmHIGH VOLTAGEHIGH SPEED NPNSILICON POWER TRANSISTORSEMEFAB DESIGNED AND DIFFUSED DIE11.52.00.25 HIGH VOLTAGE3.5 3.5 3.0FAST SWITCHING (tf = 40ns)EXCEPTIONAL HIGH TEMPERATURE PERFORMANCE1 3HIGH ENERGY RATINGEFFICIENT POWER SWITCHING2MILITARY AND HIREL

 8.2. Size:137K  semelab
 bul54a-to5.pdf pdf_icon

BUL54ASMD

SILICON POWER NPN TRANSISTOR BUL54A-TO5 Advanced Distributed Base design High Voltage Fast Switching High Energy Rating Screening Options Available Features: Features:Features:Features: Multibase for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range.

 8.3. Size:15K  semelab
 bul54a-t257f.pdf pdf_icon

BUL54ASMD

BUL54A-T257FSEMELABADVANCEDMECHANICAL DATADISTRIBUTED BASE DESIGNDimensions in mmHIGH VOLTAGE4.50HIGH SPEED NPN4.8110.400.7510.800.95SILICON POWER TRANSISTOR3.50Dia.3.70Designed for use in electronic ballast applications1 2 31.0 dia.3 places SEMEFAB DESIGNED AND DIFFUSED DIE HIGH VOLTAGE FAST SWITCHING0.750.852.54 2.65

MOSTRAR MÁS

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SA1033 | GI2716 | BC856BR | 2SC4896 | MP3731 | TD13005SMD | BDT31DF

 

 
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