All Transistors. BUL54ASMD Datasheet

 

BUL54ASMD Datasheet, Equivalent, Cross Reference Search


   Type Designator: BUL54ASMD
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 35 W
   Maximum Collector-Base Voltage |Vcb|: 1000 V
   Maximum Collector-Emitter Voltage |Vce|: 500 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 20 MHz
   Collector Capacitance (Cc): 20 pF
   Forward Current Transfer Ratio (hFE), MIN: 12
   Noise Figure, dB: -
   Package: TO276AB

 BUL54ASMD Transistor Equivalent Substitute - Cross-Reference Search

   

BUL54ASMD Datasheet (PDF)

 ..1. Size:20K  semelab
bul54asmd.pdf

BUL54ASMD
BUL54ASMD

BUL54ASMDADVANCEDMECHANICAL DATADISTRIBUTED BASE DESIGNDimensions in mmHIGH VOLTAGEHIGH SPEED NPN SILICON POWER TRANSISTOR SEMEFAB DESIGNED AND DIFFUSED DIEHIGH VOLTAGE FAST SWITCHING (tf = 40ns)EXCEPTIONAL HIGH TEMPERATURE PERFORMANCE HIGH ENERGY RATINGE

 8.1. Size:15K  semelab
bul54a-sm.pdf

BUL54ASMD
BUL54ASMD

BUL54ASMSEMELABADVANCEDMECHANICAL DATADISTRIBUTED BASE DESIGNDimensions in mmHIGH VOLTAGEHIGH SPEED NPNSILICON POWER TRANSISTORSEMEFAB DESIGNED AND DIFFUSED DIE11.52.00.25 HIGH VOLTAGE3.5 3.5 3.0FAST SWITCHING (tf = 40ns)EXCEPTIONAL HIGH TEMPERATURE PERFORMANCE1 3HIGH ENERGY RATINGEFFICIENT POWER SWITCHING2MILITARY AND HIREL

 8.2. Size:137K  semelab
bul54a-to5.pdf

BUL54ASMD
BUL54ASMD

SILICON POWER NPN TRANSISTOR BUL54A-TO5 Advanced Distributed Base design High Voltage Fast Switching High Energy Rating Screening Options Available Features: Features:Features:Features: Multibase for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range.

 8.3. Size:15K  semelab
bul54a-t257f.pdf

BUL54ASMD
BUL54ASMD

BUL54A-T257FSEMELABADVANCEDMECHANICAL DATADISTRIBUTED BASE DESIGNDimensions in mmHIGH VOLTAGE4.50HIGH SPEED NPN4.8110.400.7510.800.95SILICON POWER TRANSISTOR3.50Dia.3.70Designed for use in electronic ballast applications1 2 31.0 dia.3 places SEMEFAB DESIGNED AND DIFFUSED DIE HIGH VOLTAGE FAST SWITCHING0.750.852.54 2.65

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: KTC3879

 

 
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