BUL58BSMD Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUL58BSMD  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 50 W

Tensión colector-base (Vcb): 180 V

Tensión colector-emisor (Vce): 90 V

Tensión emisor-base (Veb): 10 V

Corriente del colector DC máxima (Ic): 7 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 20 MHz

Capacitancia de salida (Cc): 44 pF

Ganancia de corriente contínua (hFE): 20

Encapsulados: TO276AB

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BUL58BSMD datasheet

 ..1. Size:22K  semelab
 bul58bsmd.pdf pdf_icon

BUL58BSMD

BUL58BSMD ADVANCED MECHANICAL DATA DISTRIBUTED BASE DESIGN Dimensions in mm HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR SEMEFAB DESIGNED AND DIFFUSED HIGH VOLTAGE FAST SWITCHING HIGH ENERGY RATING FEATURES Multi base for efficient energy distribution a

 9.1. Size:213K  st
 bul58d.pdf pdf_icon

BUL58BSMD

BUL58D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION LOW BASE-DRIVE REQUIREMENTS 3 VERY HIGH SWITCHING SPEED 2 FULLY CHARACTERISED AT 125oC 1 HIGH RUGGEDNESS INTEGRATED ANTIPARALLEL TO-220 COL

 9.2. Size:10K  semelab
 bul58asmd.pdf pdf_icon

BUL58BSMD

BUL58ASMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 160V IC = 10A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26

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