BUL58BSMD Datasheet. Specs and Replacement
Type Designator: BUL58BSMD 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector-Emitter Voltage |Vce|: 90 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 20 MHz
Collector Capacitance (Cc): 44 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO276AB
BUL58BSMD Substitution
- BJT ⓘ Cross-Reference Search
BUL58BSMD datasheet
BUL58BSMD ADVANCED MECHANICAL DATA DISTRIBUTED BASE DESIGN Dimensions in mm HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR SEMEFAB DESIGNED AND DIFFUSED HIGH VOLTAGE FAST SWITCHING HIGH ENERGY RATING FEATURES Multi base for efficient energy distribution a... See More ⇒
BUL58D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION LOW BASE-DRIVE REQUIREMENTS 3 VERY HIGH SWITCHING SPEED 2 FULLY CHARACTERISED AT 125oC 1 HIGH RUGGEDNESS INTEGRATED ANTIPARALLEL TO-220 COL... See More ⇒
BUL58ASMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 160V IC = 10A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 ... See More ⇒
Detailed specifications: BUL5555, BUL55ASMD, BUL55BSMD, BUL56ASMD, BUL56BSMD, BUL57AN2A, BUL57AN2B, BUL58ASMD, D880, BUL62A, KA4A3Q, KA4A4L, KA4A4M, KA4A4P, KA4A4Z, KA4F3M, KA4F3P
Keywords - BUL58BSMD pdf specs
BUL58BSMD cross reference
BUL58BSMD equivalent finder
BUL58BSMD pdf lookup
BUL58BSMD substitution
BUL58BSMD replacement
