BUX40S Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUX40S  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 120 W

Tensión colector-emisor (Vce): 125 V

Corriente del colector DC máxima (Ic): 20 A

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 8 MHz

Ganancia de corriente contínua (hFE): 15

Encapsulados: TO3

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BUX40S datasheet

 ..1. Size:11K  semelab
 bux40s.pdf pdf_icon

BUX40S

BUX40S Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 125V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 20A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

 9.1. Size:205K  inchange semiconductor
 bux40a.pdf pdf_icon

BUX40S

isc Silicon NPN Power Transistor BUX40A DESCRIPTION Collector-Emitter Sustaining Voltage- V = 125V(Min) CEO(SUS) High Current Capability Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching and linear applications in military equipment. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL

 9.2. Size:204K  inchange semiconductor
 bux40.pdf pdf_icon

BUX40S

Otros transistores... BUX51SMD05, BUX52SMD, BUX52SMD05, BUX21A, BUX24A, BUX24S, BUX24X, BUX25S, 13003, BUX45X, BUX47SMD, RN2968, RN2970, RN2973HFE, BUX48SMD, BUX49SMD, BUX49SMD05