All Transistors. BUX40S Datasheet

 

BUX40S Datasheet, Equivalent, Cross Reference Search


   Type Designator: BUX40S
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 120 W
   Maximum Collector-Emitter Voltage |Vce|: 125 V
   Maximum Collector Current |Ic max|: 20 A
   Transition Frequency (ft): 8 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO3

 BUX40S Transistor Equivalent Substitute - Cross-Reference Search

   

BUX40S Datasheet (PDF)

 ..1. Size:11K  semelab
bux40s.pdf

BUX40S

BUX40SDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 125V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 20A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

 9.1. Size:205K  inchange semiconductor
bux40a.pdf

BUX40S
BUX40S

isc Silicon NPN Power Transistor BUX40ADESCRIPTION Collector-Emitter Sustaining Voltage-: V = 125V(Min)CEO(SUS)High Current CapabilityGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching and linear applications in militaryequipment.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

 9.2. Size:204K  inchange semiconductor
bux40.pdf

BUX40S
BUX40S

isc Silicon NPN Power Transistor BUX40DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 125V(Min.)CEO(SUS)Low Collector Saturation Voltage-: V = 1.2V(Max.) @I = 10ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current, high speed, high powerapplications.Absolute maximum ratings(Ta=25

Datasheet: HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , TIP142 , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .

History: MN48

 

 
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