BC338-25BK . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BC338-25BK
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.63 W
Tensión colector-base (Vcb): 30 V
Tensión colector-emisor (Vce): 25 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.8 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100 MHz
Capacitancia de salida (Cc): 12 pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: TO92
Búsqueda de reemplazo de transistor bipolar BC338-25BK
BC338-25BK Datasheet (PDF)
bc337-16bk bc337-25bk bc337-40bk bc338-16bk bc338-25bk bc338-40bk.pdf
BC337-xBK / BC338-xBK BC337-xBK / BC338-xBK General Purpose Si-Epitaxial Planar Transistors NPN NPN Si-Epitaxial Planar-Transistoren f r universellen Einsatz Version 2010-05-27 0.1 Power dissipation 625 mW 4.6 Verlustleistung Plastic case TO-92 Kunststoffgeh use (10D3) Weight approx. Gewicht ca. 0.18 g Plastic material has UL classification 94V-0 C B E Geh usematerial UL9
bc337-16-25-40 bc338-16-25-40.pdf
MCC BC337-16/25/40 TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components BC338-16/25/40 CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features NPN Capable of 0.625Watts of Power Dissipation. Collector-current 0.8A Plastic-Encapsulate Collector-base Voltage VCBO=50V(BC337) , VCBO=30V(BC338) Transistors Lead Free Fin
bc337 bc338.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC337/D Amplifier Transistors NPN Silicon BC337,-16,-25,-40 BC338,-16,-25,-40 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 3 Rating Symbol BC337 BC338 Unit CASE 29 04, STYLE 17 Collector Emitter Voltage VCEO 45 25 Vdc TO 92 (TO 226AA) Collector Base Voltage VCBO 50 30 Vdc Emitter Base Voltage VEB
bc337 bc338.pdf
BC337/338 Switching and Amplifier Applications Suitable for AF-Driver stages and low power output stages Complement to BC327/BC328 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage BC337 50 V BC338 30 V VCEO Collector-Emitter Volt
Otros transistores... BC477XDCSM , BC477YCSM , BC477YDCSM , BC517G , BC337-16BK , BC337-25BK , BC337-40BK , BC338-16BK , BD222 , BC338-40BK , BC546ABK , BC546BBK , BC547ABK , BC547BA3 , BC547BBK , BC547CBK , BC548ABK .
History: SYL2246 | DTA143XM
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