BC337-xBK / BC338-xBKBC337-xBK / BC338-xBKGeneral Purpose Si-Epitaxial Planar TransistorsNPN NPNSi-Epitaxial Planar-Transistoren fr universellen EinsatzVersion 2010-05-270.1 Power dissipation 625 mW4.6VerlustleistungPlastic case TO-92Kunststoffgehuse (10D3)Weight approx. Gewicht ca. 0.18 gPlastic material has UL classification 94V-0C B EGehusematerial UL9

MCCBC337-16/25/40TM Micro Commercial Components20736 Marilla Street ChatsworthMicro Commercial ComponentsBC338-16/25/40CA 91311Phone: (818) 701-4933Fax: (818) 701-4939FeaturesNPN Capable of 0.625Watts of Power Dissipation. Collector-current 0.8A Plastic-Encapsulate Collector-base Voltage :VCBO=50V(BC337) , VCBO=30V(BC338) Transistors Lead Free Fin

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC337/DAmplifier TransistorsNPN SiliconBC337,-16,-25,-40BC338,-16,-25,-40COLLECTOR12BASE3EMITTER1MAXIMUM RATINGS23Rating Symbol BC337 BC338 UnitCASE 2904, STYLE 17CollectorEmitter Voltage VCEO 45 25 VdcTO92 (TO226AA)CollectorBase Voltage VCBO 50 30 VdcEmitterBase Voltage VEB

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC337/DAmplifier TransistorsNPN SiliconBC337,-16,-25,-40BC338,-16,-25,-40COLLECTOR12BASE3EMITTER1MAXIMUM RATINGS23Rating Symbol BC337 BC338 UnitCASE 2904, STYLE 17CollectorEmitter Voltage VCEO 45 25 VdcTO92 (TO226AA)CollectorBase Voltage VCBO 50 30 VdcEmitterBase Voltage VEB

BC337/338Switching and Amplifier Applications Suitable for AF-Driver stages and low power output stages Complement to BC327/BC328TO-9211. Collector 2. Base 3. EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCES Collector-Emitter Voltage : BC337 50 V: BC338 30 VVCEO Collector-Emitter Volt

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SBC338NPN Silicon TransistorDescriptions PIN Connection High current application C Switching application BFeatures Suitable for AF-Driver stage and Elow power output stages Complementary pair with SBC328 TO-92 Ordering Information Type NO. Marking Package Code SBC338 SBC338 TO-92 Absolute maximum ratings (Ta=25C) Characteristic Symbol Ra

BC337 / BC338 NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURE G H Power Dissipation 1Collector 1112Base 222J3Emitter 333CLASSIFICATION OF hFE A DProduct-Rank BC337-16 BC337-25 BC337-40 Millimeter REF. BMin. Max. A 4.40 4.70 Product-Rank B

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyBC327/A BC328 PNPSILICON PLANAR EPITAXIAL TRANSISTORSBC337/A BC338 NPNTO-92Plastic PackageFor Lead Free Parts, Device Part # will be Prefixed with "T"EBCGeneral Purpose Transistors Best Suited for use in Driver and Output Stages of Audio AmplifierABSOLUTE MAXIMUM RATINGS (Ta=25C)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC337/BC338 TRANSISTOR (NPN) TO-92 FEATURES Power dissipation 1. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2.BASE Symbol Parameter Value Unit3. EMITTER VCBO Collector-Base Voltage BC337 50 V BC338 30 VCEO Collector-Emitter Voltage BC337 45 V BC338 25 VE

SEMICONDUCTOR BC338TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION. B CFEATURESHigh Current : IC=800mA.DC Current Gain : hFE=100 630 (VCE=1V, Ic=100mA).N DIM MILLIMETERSFor Complementary with PNP type BC328.A 4.70 MAXEKG B 4.80 MAXC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85MAXIMUM RATING (Ta=25 )H 0.45_H J 14.

BC337/338(NPN)TO-92 Bipolar TransistorsTO-92 1. COLLECTOR 2. BASE 3. EMITTER Features Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage BC337 50 V BC338 30 VCEO Collector-Emitter Voltage BC337 45 V BC338 25 Dimensions in inches and (millimeters)VEBO Emitter-Base Voltage 5 V IC Col

BC337/BC338NPN General Purpose TransistorCOLLECTOR1P b Lead(Pb)-FreeTO-922BASE13 23EMITTERMaximum Ratings(TA=25C unless otherwise noted)Rating Symbol BC337 BC338 UnitVCBOCollector-Base voltage50 30 VVCEOVCollector-Emitter voltage 45 25VEBOVEmitter-Base voltage5.0 5.0Collector Current Continuous lCmA800Total Device DissipationPD625 mW/

SEMICONDUCTOR BC337/338 TECHNICAL DATABC337/BC338 TRANSISTOR (NPN) B CFEATURESHigh Current : IC=800mA.DC Current Gain : hFE=100 630 (VCE=1V, Ic=100mA).DIM MILLIMETERSFor Complementary with PNP type BC327.A 4.70 MAXEB 4.80 MAXGC 3.70 MAXDD 0.55 MAXE 1.00F 1.27MAXIMUM RATINGS (Ta=25 unless otherwise noted) G 0.85H 0.45_HJ 14.00 + 0.50L 2.30Symb