HN4B101J Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HN4B101J

Código: 5K

Material: Si

Polaridad de transistor: NPN*PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.55 W

Tensión colector-base (Vcb): 30 V

Tensión colector-emisor (Vce): 30 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 200

Encapsulados: SOT25

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HN4B101J datasheet

 ..1. Size:222K  toshiba
 hn4b101j.pdf pdf_icon

HN4B101J

HN4B101J TOSHIBA Transistor Silicon PNP / NPN Epitaxial Type (PCT Process) HN4B101J MOS Gate Drive Applications Unit mm Switching Applications +0.2 +0.2 2.8 -0.3 2.8 -0.3 +0.2 +0.2 1.6 -0.1 1.6 -0.1 Small footprint due to a small and thin package 1 5 High DC current gain hFE = 200 to 500 (IC = -0.12 A) 1 5 Low collector-emitter satu

 ..2. Size:223K  toshiba
 hn4b101j .pdf pdf_icon

HN4B101J

HN4B101J TOSHIBA Transistor Silicon PNP / NPN Epitaxial Type (PCT Process) HN4B101J MOS Gate Drive Applications Unit mm Switching Applications +0.2 +0.2 2.8 -0.3 2.8 -0.3 +0.2 +0.2 1.6 -0.1 1.6 -0.1 Small footprint due to a small and thin package 1 5 High DC current gain hFE = 200 to 500 (IC = -0.12 A) 1 5 Low collector-emitter satu

 8.1. Size:219K  toshiba
 hn4b102j .pdf pdf_icon

HN4B101J

HN4B102J TOSHIBA Transistor Silicon PNP / NPN Epitaxial Type (PCT Process) HN4B102J MOS Gate Drive Applications Unit mm Switching Applications +0.2 +0.2 2.8 -0.3 2.8 -0.3 Small footprint due to a small and thin package +0.2 +0.2 1.6 -0.1 1.6 -0.1 High DC current gain PNP hFE = 200 to 500 (IC = 0.2 A) NPN hFE = 200 to 500 (IC = 0.2 A)

 8.2. Size:217K  toshiba
 hn4b102j.pdf pdf_icon

HN4B101J

HN4B102J TOSHIBA Transistor Silicon PNP / NPN Epitaxial Type (PCT Process) HN4B102J MOS Gate Drive Applications Unit mm Switching Applications +0.2 +0.2 2.8 -0.3 2.8 -0.3 Small footprint due to a small and thin package +0.2 +0.2 1.6 -0.1 1.6 -0.1 High DC current gain PNP hFE = 200 to 500 (IC = 0.2 A) NPN hFE = 200 to 500 (IC = 0.2 A)

MOSTRAR MÁS

Otros transistores... INC1001AC1, INC2001AC1, INC2001AM1, INC2001AU1, HIT1577, HLB121, HN1B01FDW1T1G, HN2E04F, 2N2222A, HN4B102J, HQ1A3M, HQ1A4A, HQ1F2Q, HQ1F3M, HQ1F3P, HQ1L2N, HQ1L2Q