HN4B101J Todos los transistores

 

HN4B101J . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HN4B101J
   Código: 5K
   Material: Si
   Polaridad de transistor: NPN*PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.55 W
   Tensión colector-base (Vcb): 30 V
   Tensión colector-emisor (Vce): 30 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 200
   Paquete / Cubierta: SOT25
     - Selección de transistores por parámetros

 

HN4B101J Datasheet (PDF)

 ..1. Size:222K  toshiba
 hn4b101j.pdf pdf_icon

HN4B101J

HN4B101J TOSHIBA Transistor Silicon PNP / NPN Epitaxial Type (PCT Process) HN4B101J MOS Gate Drive Applications Unit: mmSwitching Applications +0.2+0.22.8 -0.32.8 -0.3+0.2+0.21.6 -0.11.6 -0.1 Small footprint due to a small and thin package 1 5 High DC current gain : hFE = 200 to 500 (IC = -0.12 A) 1 5 Low collector-emitter satu

 ..2. Size:223K  toshiba
 hn4b101j .pdf pdf_icon

HN4B101J

HN4B101J TOSHIBA Transistor Silicon PNP / NPN Epitaxial Type (PCT Process) HN4B101J MOS Gate Drive Applications Unit: mmSwitching Applications +0.2+0.22.8 -0.32.8 -0.3+0.2+0.21.6 -0.11.6 -0.1 Small footprint due to a small and thin package 1 5 High DC current gain : hFE = 200 to 500 (IC = -0.12 A) 1 5 Low collector-emitter satu

 8.1. Size:219K  toshiba
 hn4b102j .pdf pdf_icon

HN4B101J

HN4B102J TOSHIBA Transistor Silicon PNP / NPN Epitaxial Type (PCT Process) HN4B102J MOS Gate Drive Applications Unit: mmSwitching Applications +0.2+0.22.8 -0.32.8 -0.3 Small footprint due to a small and thin package +0.2+0.21.6 -0.11.6 -0.1 High DC current gain : PNP hFE = 200 to 500 (IC =0.2 A) : NPN hFE = 200 to 500 (IC = 0.2 A)

 8.2. Size:217K  toshiba
 hn4b102j.pdf pdf_icon

HN4B101J

HN4B102J TOSHIBA Transistor Silicon PNP / NPN Epitaxial Type (PCT Process) HN4B102J MOS Gate Drive Applications Unit: mmSwitching Applications +0.2+0.22.8 -0.32.8 -0.3 Small footprint due to a small and thin package +0.2+0.21.6 -0.11.6 -0.1 High DC current gain : PNP hFE = 200 to 500 (IC =0.2 A) : NPN hFE = 200 to 500 (IC = 0.2 A)

MOSTRAR MÁS

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2N1521 | UN2219 | 2SB828 | 2SA557 | GE10006 | 2N356

 

 
Back to Top

 


 
.