All Transistors. HN4B101J Datasheet

 

HN4B101J Datasheet and Replacement


   Type Designator: HN4B101J
   SMD Transistor Code: 5K
   Material of Transistor: Si
   Polarity: NPN*PNP
   Maximum Collector Power Dissipation (Pc): 0.55 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: SOT25
      - BJT Cross-Reference Search

   

HN4B101J Datasheet (PDF)

 ..1. Size:222K  toshiba
 hn4b101j.pdf pdf_icon

HN4B101J

HN4B101J TOSHIBA Transistor Silicon PNP / NPN Epitaxial Type (PCT Process) HN4B101J MOS Gate Drive Applications Unit: mmSwitching Applications +0.2+0.22.8 -0.32.8 -0.3+0.2+0.21.6 -0.11.6 -0.1 Small footprint due to a small and thin package 1 5 High DC current gain : hFE = 200 to 500 (IC = -0.12 A) 1 5 Low collector-emitter satu

 ..2. Size:223K  toshiba
 hn4b101j .pdf pdf_icon

HN4B101J

HN4B101J TOSHIBA Transistor Silicon PNP / NPN Epitaxial Type (PCT Process) HN4B101J MOS Gate Drive Applications Unit: mmSwitching Applications +0.2+0.22.8 -0.32.8 -0.3+0.2+0.21.6 -0.11.6 -0.1 Small footprint due to a small and thin package 1 5 High DC current gain : hFE = 200 to 500 (IC = -0.12 A) 1 5 Low collector-emitter satu

 8.1. Size:219K  toshiba
 hn4b102j .pdf pdf_icon

HN4B101J

HN4B102J TOSHIBA Transistor Silicon PNP / NPN Epitaxial Type (PCT Process) HN4B102J MOS Gate Drive Applications Unit: mmSwitching Applications +0.2+0.22.8 -0.32.8 -0.3 Small footprint due to a small and thin package +0.2+0.21.6 -0.11.6 -0.1 High DC current gain : PNP hFE = 200 to 500 (IC =0.2 A) : NPN hFE = 200 to 500 (IC = 0.2 A)

 8.2. Size:217K  toshiba
 hn4b102j.pdf pdf_icon

HN4B101J

HN4B102J TOSHIBA Transistor Silicon PNP / NPN Epitaxial Type (PCT Process) HN4B102J MOS Gate Drive Applications Unit: mmSwitching Applications +0.2+0.22.8 -0.32.8 -0.3 Small footprint due to a small and thin package +0.2+0.21.6 -0.11.6 -0.1 High DC current gain : PNP hFE = 200 to 500 (IC =0.2 A) : NPN hFE = 200 to 500 (IC = 0.2 A)

SHOW MORE

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2N332A | BDW24 | BC847RA | MMBT3906HE3 | 2SB744A | 2N2874 | 2SB247

Keywords - HN4B101J transistor datasheet

 HN4B101J cross reference
 HN4B101J equivalent finder
 HN4B101J lookup
 HN4B101J substitution
 HN4B101J replacement

 

 
Back to Top

 


 
.