HN4B102J
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HN4B102J
Código: 5L
Material: Si
Polaridad de transistor: NPN*PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.75
W
Tensión colector-base (Vcb): 30
V
Tensión colector-emisor (Vce): 30
V
Tensión emisor-base (Veb): 7
V
Corriente del colector DC máxima (Ic): 2
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 200
Paquete / Cubierta:
SOT25
Búsqueda de reemplazo de transistor bipolar HN4B102J
HN4B102J
Datasheet (PDF)
..1. Size:219K toshiba
hn4b102j .pdf
HN4B102J TOSHIBA Transistor Silicon PNP / NPN Epitaxial Type (PCT Process) HN4B102J MOS Gate Drive Applications Unit: mmSwitching Applications +0.2+0.22.8 -0.32.8 -0.3 Small footprint due to a small and thin package +0.2+0.21.6 -0.11.6 -0.1 High DC current gain : PNP hFE = 200 to 500 (IC =0.2 A) : NPN hFE = 200 to 500 (IC = 0.2 A)
..2. Size:217K toshiba
hn4b102j.pdf
HN4B102J TOSHIBA Transistor Silicon PNP / NPN Epitaxial Type (PCT Process) HN4B102J MOS Gate Drive Applications Unit: mmSwitching Applications +0.2+0.22.8 -0.32.8 -0.3 Small footprint due to a small and thin package +0.2+0.21.6 -0.11.6 -0.1 High DC current gain : PNP hFE = 200 to 500 (IC =0.2 A) : NPN hFE = 200 to 500 (IC = 0.2 A)
8.1. Size:222K toshiba
hn4b101j.pdf
HN4B101J TOSHIBA Transistor Silicon PNP / NPN Epitaxial Type (PCT Process) HN4B101J MOS Gate Drive Applications Unit: mmSwitching Applications +0.2+0.22.8 -0.32.8 -0.3+0.2+0.21.6 -0.11.6 -0.1 Small footprint due to a small and thin package 1 5 High DC current gain : hFE = 200 to 500 (IC = -0.12 A) 1 5 Low collector-emitter satu
8.2. Size:223K toshiba
hn4b101j .pdf
HN4B101J TOSHIBA Transistor Silicon PNP / NPN Epitaxial Type (PCT Process) HN4B101J MOS Gate Drive Applications Unit: mmSwitching Applications +0.2+0.22.8 -0.32.8 -0.3+0.2+0.21.6 -0.11.6 -0.1 Small footprint due to a small and thin package 1 5 High DC current gain : hFE = 200 to 500 (IC = -0.12 A) 1 5 Low collector-emitter satu
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