All Transistors. HN4B102J Datasheet

 

HN4B102J Datasheet and Replacement


   Type Designator: HN4B102J
   SMD Transistor Code: 5L
   Material of Transistor: Si
   Polarity: NPN*PNP
   Maximum Collector Power Dissipation (Pc): 0.75 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: SOT25
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HN4B102J Datasheet (PDF)

 ..1. Size:219K  toshiba
 hn4b102j .pdf pdf_icon

HN4B102J

HN4B102J TOSHIBA Transistor Silicon PNP / NPN Epitaxial Type (PCT Process) HN4B102J MOS Gate Drive Applications Unit: mmSwitching Applications +0.2+0.22.8 -0.32.8 -0.3 Small footprint due to a small and thin package +0.2+0.21.6 -0.11.6 -0.1 High DC current gain : PNP hFE = 200 to 500 (IC =0.2 A) : NPN hFE = 200 to 500 (IC = 0.2 A)

 ..2. Size:217K  toshiba
 hn4b102j.pdf pdf_icon

HN4B102J

HN4B102J TOSHIBA Transistor Silicon PNP / NPN Epitaxial Type (PCT Process) HN4B102J MOS Gate Drive Applications Unit: mmSwitching Applications +0.2+0.22.8 -0.32.8 -0.3 Small footprint due to a small and thin package +0.2+0.21.6 -0.11.6 -0.1 High DC current gain : PNP hFE = 200 to 500 (IC =0.2 A) : NPN hFE = 200 to 500 (IC = 0.2 A)

 8.1. Size:222K  toshiba
 hn4b101j.pdf pdf_icon

HN4B102J

HN4B101J TOSHIBA Transistor Silicon PNP / NPN Epitaxial Type (PCT Process) HN4B101J MOS Gate Drive Applications Unit: mmSwitching Applications +0.2+0.22.8 -0.32.8 -0.3+0.2+0.21.6 -0.11.6 -0.1 Small footprint due to a small and thin package 1 5 High DC current gain : hFE = 200 to 500 (IC = -0.12 A) 1 5 Low collector-emitter satu

 8.2. Size:223K  toshiba
 hn4b101j .pdf pdf_icon

HN4B102J

HN4B101J TOSHIBA Transistor Silicon PNP / NPN Epitaxial Type (PCT Process) HN4B101J MOS Gate Drive Applications Unit: mmSwitching Applications +0.2+0.22.8 -0.32.8 -0.3+0.2+0.21.6 -0.11.6 -0.1 Small footprint due to a small and thin package 1 5 High DC current gain : hFE = 200 to 500 (IC = -0.12 A) 1 5 Low collector-emitter satu

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