HN4B102J Specs and Replacement

Type Designator: HN4B102J

SMD Transistor Code: 5L

Material of Transistor: Si

Polarity: NPN*PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.75 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: SOT25

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HN4B102J datasheet

 ..1. Size:219K  toshiba

 hn4b102j .pdf pdf_icon

HN4B102J

HN4B102J TOSHIBA Transistor Silicon PNP / NPN Epitaxial Type (PCT Process) HN4B102J MOS Gate Drive Applications Unit mm Switching Applications +0.2 +0.2 2.8 -0.3 2.8 -0.3 Small footprint due to a small and thin package +0.2 +0.2 1.6 -0.1 1.6 -0.1 High DC current gain PNP hFE = 200 to 500 (IC = 0.2 A) NPN hFE = 200 to 500 (IC = 0.2 A) ... See More ⇒

 ..2. Size:217K  toshiba

 hn4b102j.pdf pdf_icon

HN4B102J

HN4B102J TOSHIBA Transistor Silicon PNP / NPN Epitaxial Type (PCT Process) HN4B102J MOS Gate Drive Applications Unit mm Switching Applications +0.2 +0.2 2.8 -0.3 2.8 -0.3 Small footprint due to a small and thin package +0.2 +0.2 1.6 -0.1 1.6 -0.1 High DC current gain PNP hFE = 200 to 500 (IC = 0.2 A) NPN hFE = 200 to 500 (IC = 0.2 A) ... See More ⇒

 8.1. Size:222K  toshiba

 hn4b101j.pdf pdf_icon

HN4B102J

HN4B101J TOSHIBA Transistor Silicon PNP / NPN Epitaxial Type (PCT Process) HN4B101J MOS Gate Drive Applications Unit mm Switching Applications +0.2 +0.2 2.8 -0.3 2.8 -0.3 +0.2 +0.2 1.6 -0.1 1.6 -0.1 Small footprint due to a small and thin package 1 5 High DC current gain hFE = 200 to 500 (IC = -0.12 A) 1 5 Low collector-emitter satu... See More ⇒

 8.2. Size:223K  toshiba

 hn4b101j .pdf pdf_icon

HN4B102J

HN4B101J TOSHIBA Transistor Silicon PNP / NPN Epitaxial Type (PCT Process) HN4B101J MOS Gate Drive Applications Unit mm Switching Applications +0.2 +0.2 2.8 -0.3 2.8 -0.3 +0.2 +0.2 1.6 -0.1 1.6 -0.1 Small footprint due to a small and thin package 1 5 High DC current gain hFE = 200 to 500 (IC = -0.12 A) 1 5 Low collector-emitter satu... See More ⇒

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Detailed specifications: INC2001AC1, INC2001AM1, INC2001AU1, HIT1577, HLB121, HN1B01FDW1T1G, HN2E04F, HN4B101J, 2SD718, HQ1A3M, HQ1A4A, HQ1F2Q, HQ1F3M, HQ1F3P, HQ1L2N, HQ1L2Q, HR1A3M

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