ISC6053AM1 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ISC6053AM1
Código: BE_BF_BG
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 25 V
Tensión colector-emisor (Vce): 20 V
Tensión emisor-base (Veb): 4 V
Corriente del colector DC máxima (Ic): 0.65 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 290 MHz
Ganancia de corriente contínua (hFE): 150
Encapsulados: SOT323
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ISC6053AM1 datasheet
isc6053au1.pdf
ISC6053AU1 PRELIMINARY This datasheet is possibility of change. FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION Because this device is developing now. SILICON NPN EPITAXIAL TYPE Unit mm OUTLINE DRAWING DESCRIPTION 1.5 ISC6053AU1 is a silicon NPN epitaxial type transistor 0.35 0.8 0.35 Designed with high collector current, low VCE(sat). FEATURE
isc6046au1.pdf
ISC6046AU1 PRELIMINARY This datasheet is possibility of change. FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION Because this device is developing now. SILICON NPN EPITAXIAL TYPE Unit mm OUTLINE DRAWING DESCRIPTION 1.5 ISC6046AU1 is a silicon NPN epitaxial type transistor designed with 0.35 0.8 0.35 high collector current, low VCE sat . FEATURE
isc60nm60l.pdf
isc N-Channel MOSFET Transistor ISC60NM60L FEATURES Drain Current I = 60A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 65m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno
Otros transistores... KZT749, KZT789A, KZT849, KZT851, KZT853, ISC3581AS1, ISC4356AS1, ISC6046AU1, SS8050, ISC6053AU1, ISD1447AS1, IT120, IT120A, ISC3242AS1, ISC3244AS1, ISC3247AS1, ISC3249AS1
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