All Transistors. ISC6053AM1 Datasheet

 

ISC6053AM1 Datasheet and Replacement


   Type Designator: ISC6053AM1
   SMD Transistor Code: BE_BF_BG
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.65 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 290 MHz
   Forward Current Transfer Ratio (hFE), MIN: 150
   Noise Figure, dB: -
   Package: SOT323
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ISC6053AM1 Datasheet (PDF)

 ..1. Size:152K  isahaya
 isc6053am1.pdf pdf_icon

ISC6053AM1

ISC6053AM1FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATIONSILICON NPN EPITAXIAL TYPEUnitmmOUTLINE DRAWING DESCRIPTION 2.1 ISC6053AM1 is a silicon NPN epitaxial type transistor 0.425 1.25 0.425 Designed with high collector current, low VCE(sat). FEATURE High collector current ICMAX=650mA Low collector to emitter saturation voltage VCE

 6.1. Size:189K  isahaya
 isc6053au1.pdf pdf_icon

ISC6053AM1

ISC6053AU1PRELIMINARY This datasheet is possibility of change. FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATIONBecause this device is developing now. SILICON NPN EPITAXIAL TYPEUnitmmOUTLINE DRAWING DESCRIPTION 1.5 ISC6053AU1 is a silicon NPN epitaxial type transistor 0.35 0.8 0.35Designed with high collector current, low VCE(sat). FEATURE

 9.1. Size:140K  isahaya
 isc6046au1.pdf pdf_icon

ISC6053AM1

ISC6046AU1PRELIMINARY This datasheet is possibility of change. FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATIONBecause this device is developing now. SILICON NPN EPITAXIAL TYPEUnitmmOUTLINE DRAWING DESCRIPTION 1.5 ISC6046AU1 is a silicon NPN epitaxial type transistor designed with 0.35 0.8 0.35high collector current, low VCEsat. FEATURE

 9.2. Size:330K  inchange semiconductor
 isc60nm60l.pdf pdf_icon

ISC6053AM1

isc N-Channel MOSFET Transistor ISC60NM60LFEATURESDrain Current : I = 60A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 65m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

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Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: AC166 | KSD5741 | 2SC5489 | UMW8N | DMC364A6 | MM3725 | 2SC46

Keywords - ISC6053AM1 transistor datasheet

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