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IMD10AMT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IMD10AMT1G
   Código: D10
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN*PNP
   Resistencia de Entrada Base R1 = 13 kOhm
   Resistencia Base-Emisor R2 = 0 kOhm

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.285 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 68
   Paquete / Cubierta: SC74

 Búsqueda de reemplazo de transistor bipolar IMD10AMT1G

 

IMD10AMT1G Datasheet (PDF)

 ..1. Size:58K  onsemi
imd10amt1g.pdf

IMD10AMT1G
IMD10AMT1G

IMD10AMT1GDual Bias ResistorTransistorNPN and PNP Silicon Surface MountTransistors with Monolithic Bias Resistorhttp://onsemi.comNetwork High Current: IC = 500 mA max(3) (2) (1) This is a Pb-Free DeviceMAXIMUM RATINGS (TA = 25C)R1Q1Rating Symbol Value UnitQ2Collector-Base Voltage V(BR)CBO 50 VdcR2Collector-Emitter Voltage V(BR)CEO 50 VdcR1Emitter-Ba

 8.1. Size:79K  rohm
imd10a.pdf

IMD10AMT1G
IMD10AMT1G

IMD10A Transistors Power management (dual digital transistors) IMD10A Dimensions (Unit : mm) Features 1) Two digital class transistors in a SMT package. 2) Up to 500mA can be driven. 3) Low VCE(sat) of drive transistors for low power (4) (5) (6)dissipation. (3) (2) (1)ROHM : SMT6EIAJ : SC-74Each lead has same dimensions Package, marking, and packaging specification

 8.2. Size:87K  diodes
dimd10a.pdf

IMD10AMT1G
IMD10AMT1G

DIMD10ADUAL PRE-BIASED TRANSISTORS FOR POWER MANAGEMENT Features Mechanical Data Epitaxial Planar Die Construction Case: SC-74R Built-In Biasing Resistors Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 One 500mA PNP and One 100mA NPN Moisture Sensitivity: Level 1 per J-STD-020 Lead Free/RoHS Com

 8.3. Size:240K  diodes
mimd10a.pdf

IMD10AMT1G
IMD10AMT1G

MIMD10AMIMD10A DUAL PRE-BIASED TRANSISTORS FOR POWER MANAGEMENT Features Epitaxial Planar Die Construction ASOT-363 Built-In Biasing Resistors Dim Min Max C2 B1 E1 One 500mA PNP and One 100mA NPN A 0.10 0.30 Lead Free/RoHS Compliant (Note 1) B C B 1.15 1.35 "Green" Device (Note 3 and 4) C 2.00 2.20 E2 B2 C1D 0.65 Nominal Mechanical Data

Otros transistores... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , A1015 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

 

 
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