IMD10AMT1G Datasheet. Specs and Replacement

Type Designator: IMD10AMT1G  📄📄 

SMD Transistor Code: D10

Material of Transistor: Si

Polarity: Pre-Biased-NPN*PNP

Built in Bias Resistor R1 = 13 kOhm

Built in Bias Resistor R2 = 0 kOhm

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.285 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 68

Noise Figure, dB: -

Package: SC74

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IMD10AMT1G datasheet

 ..1. Size:58K  onsemi

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IMD10AMT1G

IMD10AMT1G Dual Bias Resistor Transistor NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor http //onsemi.com Network High Current IC = 500 mA max (3) (2) (1) This is a Pb-Free Device MAXIMUM RATINGS (TA = 25 C) R1 Q1 Rating Symbol Value Unit Q2 Collector-Base Voltage V(BR)CBO 50 Vdc R2 Collector-Emitter Voltage V(BR)CEO 50 Vdc R1 Emitter-Ba... See More ⇒

 8.1. Size:79K  rohm

imd10a.pdf pdf_icon

IMD10AMT1G

IMD10A Transistors Power management (dual digital transistors) IMD10A Dimensions (Unit mm) Features 1) Two digital class transistors in a SMT package. 2) Up to 500mA can be driven. 3) Low VCE(sat) of drive transistors for low power (4) (5) (6) dissipation. (3) (2) (1) ROHM SMT6 EIAJ SC-74 Each lead has same dimensions Package, marking, and packaging specification... See More ⇒

 8.2. Size:87K  diodes

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IMD10AMT1G

DIMD10A DUAL PRE-BIASED TRANSISTORS FOR POWER MANAGEMENT Features Mechanical Data Epitaxial Planar Die Construction Case SC-74R Built-In Biasing Resistors Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 One 500mA PNP and One 100mA NPN Moisture Sensitivity Level 1 per J-STD-020 Lead Free/RoHS Com... See More ⇒

 8.3. Size:240K  diodes

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IMD10AMT1G

MIMD10A MIMD10A DUAL PRE-BIASED TRANSISTORS FOR POWER MANAGEMENT Features Epitaxial Planar Die Construction A SOT-363 Built-In Biasing Resistors Dim Min Max C2 B1 E1 One 500mA PNP and One 100mA NPN A 0.10 0.30 Lead Free/RoHS Compliant (Note 1) B C B 1.15 1.35 "Green" Device (Note 3 and 4) C 2.00 2.20 E2 B2 C1 D 0.65 Nominal Mechanical Data ... See More ⇒

Detailed specifications: ISA1995AS1, ISA2166AM1, ISA2166AU1, ISA2188AM1, ISA2188AU1, ISB1035AS1, IMB2AFRA, IMB3AFRA, D667, IMD2AFRA, IMD3AFRA, IMD6AFRA, IMD9AFRA, IMH11AFRA, IMH14AFRA, IMH15A, IMH15AFRA

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