All Transistors. IMD10AMT1G Datasheet

 

IMD10AMT1G Datasheet, Equivalent, Cross Reference Search


   Type Designator: IMD10AMT1G
   SMD Transistor Code: D10
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN*PNP
   Built in Bias Resistor R1 = 13 kOhm
   Built in Bias Resistor R2 = 0 kOhm
   Maximum Collector Power Dissipation (Pc): 0.285 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 68
   Noise Figure, dB: -
   Package: SC74

 IMD10AMT1G Transistor Equivalent Substitute - Cross-Reference Search

   

IMD10AMT1G Datasheet (PDF)

 ..1. Size:58K  onsemi
imd10amt1g.pdf

IMD10AMT1G
IMD10AMT1G

IMD10AMT1GDual Bias ResistorTransistorNPN and PNP Silicon Surface MountTransistors with Monolithic Bias Resistorhttp://onsemi.comNetwork High Current: IC = 500 mA max(3) (2) (1) This is a Pb-Free DeviceMAXIMUM RATINGS (TA = 25C)R1Q1Rating Symbol Value UnitQ2Collector-Base Voltage V(BR)CBO 50 VdcR2Collector-Emitter Voltage V(BR)CEO 50 VdcR1Emitter-Ba

 8.1. Size:79K  rohm
imd10a.pdf

IMD10AMT1G
IMD10AMT1G

IMD10A Transistors Power management (dual digital transistors) IMD10A Dimensions (Unit : mm) Features 1) Two digital class transistors in a SMT package. 2) Up to 500mA can be driven. 3) Low VCE(sat) of drive transistors for low power (4) (5) (6)dissipation. (3) (2) (1)ROHM : SMT6EIAJ : SC-74Each lead has same dimensions Package, marking, and packaging specification

 8.2. Size:87K  diodes
dimd10a.pdf

IMD10AMT1G
IMD10AMT1G

DIMD10ADUAL PRE-BIASED TRANSISTORS FOR POWER MANAGEMENT Features Mechanical Data Epitaxial Planar Die Construction Case: SC-74R Built-In Biasing Resistors Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 One 500mA PNP and One 100mA NPN Moisture Sensitivity: Level 1 per J-STD-020 Lead Free/RoHS Com

 8.3. Size:240K  diodes
mimd10a.pdf

IMD10AMT1G
IMD10AMT1G

MIMD10AMIMD10A DUAL PRE-BIASED TRANSISTORS FOR POWER MANAGEMENT Features Epitaxial Planar Die Construction ASOT-363 Built-In Biasing Resistors Dim Min Max C2 B1 E1 One 500mA PNP and One 100mA NPN A 0.10 0.30 Lead Free/RoHS Compliant (Note 1) B C B 1.15 1.35 "Green" Device (Note 3 and 4) C 2.00 2.20 E2 B2 C1D 0.65 Nominal Mechanical Data

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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