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IMH11AFRA . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IMH11AFRA
   Código: H11
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 10 kOhm
   Resistencia Base-Emisor R2 = 10 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.3 W
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 250 MHz
   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: SC74

 Búsqueda de reemplazo de transistor bipolar IMH11AFRA

 

IMH11AFRA Datasheet (PDF)

 ..1. Size:1336K  rohm
 emh11fha umh11nfha imh11afra.pdf pdf_icon

IMH11AFRA

EMH11 / UMH11N / IMH11A EMH11FHA / UMH11NFHA / IMH11AFRA Datasheet NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified lOutline EMT6 UMT6 Parameter Tr1 and Tr2 (6) (6) (5) VCC (5) 50V (4) (4) (1) (1) IC(MAX.) (2) 100mA (2) (3) (3) R1 10kW EMH11 UMH11N EMH11FHA UMH11NFHA R2 10kW (SC-107C) SOT-353 (SC-88)

 8.1. Size:69K  rohm
 emh11 umh11n imh11a.pdf pdf_icon

IMH11AFRA

EMH11 / UMH11N / IMH11A Transistors General purpose (dual digital transistors) EMH11 / UMH11N / IMH11A External dimensions (Unit mm) Features 1) Two DTC114E chips in a EMT or UMT or SMT EMH11 package. 2) Mounting possible with EMT3 or UMT3 or SMT3 (4) (3) (5) (2) (6) (1) automatic mounting machines. 1.2 1.6 3) Transistor elements are independent, eliminating interf

 8.2. Size:62K  rohm
 umh11n imh11a h11 sot23-6sot363.pdf pdf_icon

IMH11AFRA

Transistors General purpose (dual digital transistors ) UMH11N / IMH11A FFeatures FExternal dimensions (Units mm) 1) Two DTC114E chips in a UMT or SMT package. 2) Mounting possible with UMT3 or SMT3 automatic mounting ma- chines. 3) Transistor elements are indepen- dent, eliminating interference. 4) Mounting cost and area can be cut in half. FStructure Epitaxial planar type NPN

 9.1. Size:120K  chenmko
 chimh11gp.pdf pdf_icon

IMH11AFRA

CHENMKO ENTERPRISE CO.,LTD CHIMH11GP SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 50 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-74/SOT-457) SC-74/SOT-457 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. (4) * High saturatio

MOSTRAR MÁS

Otros transistores... ISB1035AS1 , IMB2AFRA , IMB3AFRA , IMD10AMT1G , IMD2AFRA , IMD3AFRA , IMD6AFRA , IMD9AFRA , 2SC5200 , IMH14AFRA , IMH15A , IMH15AFRA , IMH1AFRA , IMH20TR1G , IMH21 , IMH23 , IMH2AFRA .

History: CHDTC123EEGP | CHDTC115GKGP | NSP598 | 2SC4675 | 2SA562-Y | NSE171 | MPS4125

 

 
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