All Transistors. IMH11AFRA Datasheet

 

IMH11AFRA Datasheet, Equivalent, Cross Reference Search


   Type Designator: IMH11AFRA
   SMD Transistor Code: H11
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 10 kOhm
   Built in Bias Resistor R2 = 10 kOhm

Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: SC74

 IMH11AFRA Transistor Equivalent Substitute - Cross-Reference Search

   

IMH11AFRA Datasheet (PDF)

 ..1. Size:1336K  rohm
emh11fha umh11nfha imh11afra.pdf

IMH11AFRA
IMH11AFRA

EMH11 / UMH11N / IMH11AEMH11FHA / UMH11NFHA / IMH11AFRADatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) VCC (5) 50V (4) (4) (1) (1) IC(MAX.) (2) 100mA (2) (3) (3) R110kWEMH11 UMH11N EMH11FHA UMH11NFHAR210kW (SC-107C) SOT-353 (SC-88)

 8.1. Size:69K  rohm
emh11 umh11n imh11a.pdf

IMH11AFRA
IMH11AFRA

EMH11 / UMH11N / IMH11A Transistors General purpose (dual digital transistors) EMH11 / UMH11N / IMH11A External dimensions (Unit : mm) Features 1) Two DTC114E chips in a EMT or UMT or SMT EMH11package. 2) Mounting possible with EMT3 or UMT3 or SMT3 (4) (3)(5) (2)(6) (1)automatic mounting machines. 1.21.63) Transistor elements are independent, eliminating interf

 8.2. Size:62K  rohm
umh11n imh11a h11 sot23-6sot363.pdf

IMH11AFRA
IMH11AFRA

TransistorsGeneral purpose(dual digital transistors )UMH11N / IMH11AFFeatures FExternal dimensions (Units: mm)1) Two DTC114E chips in a UMT orSMT package.2) Mounting possible with UMT3 orSMT3 automatic mounting ma-chines.3) Transistor elements are indepen-dent, eliminating interference.4) Mounting cost and area can be cutin half.FStructureEpitaxial planar typeNPN

 9.1. Size:120K  chenmko
chimh11gp.pdf

IMH11AFRA
IMH11AFRA

CHENMKO ENTERPRISE CO.,LTDCHIMH11GPSURFACE MOUNT Dual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 50 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-74/SOT-457)SC-74/SOT-457* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.(4)* High saturatio

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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