INA5002AP1 Todos los transistores

 

INA5002AP1 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: INA5002AP1
   Código: BA
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.5 W
   Tensión colector-base (Vcb): 80 V
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 3 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 200 MHz
   Capacitancia de salida (Cc): 25 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SOT89

 Búsqueda de reemplazo de transistor bipolar INA5002AP1

 

INA5002AP1 Datasheet (PDF)

 ..1. Size:128K  isahaya
ina5002ap1.pdf pdf_icon

INA5002AP1

INA5002AP1 For low frequency power amplify Silicon PNP Epitaxial DESCRIPTION OUTLINE DRAWING UNIT INA5002AP1 is a silicon PNP epitaxial transistor designed for relay 4.6 MAX drive or Power supply application. 1.5 1.6 FEATURE Small package for easy mounting. High voltage VCEO=-60V C E B High collector current IC=-3A Low VCE(sat) VCE sat =-0.6

 6.1. Size:232K  isahaya
ina5002ac1.pdf pdf_icon

INA5002AP1

INA5002AC1 PRELIMINARY Notice This is not a final specification FOR LOW FREQUENCY AMPLIFY APPLICATION Some parametric are subject to change. SILICON PNP EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING UNIT mm 2.8 INA5002AC1 is a silicon PNP epitaxial transistor designed for 0.65 1.5 0.65 relay drive or Power supply application. FEATURE Super mini package for

 8.1. Size:106K  isahaya
ina5005ac1.pdf pdf_icon

INA5002AP1

INA5005AC1 PRELIMINARY Notice This is not a final specification FOR HIGH CURRENT DRIVE APPLICATION Some parametric are subject to change. SILICON PNP EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING UNIT mm 2.8 INA5005AC1 is a silicon PNP epitaxial type transistor. 0.65 1.5 0.65 It is designed with high collector current and small VCE(sat). FEATURE Super mini pack

 8.2. Size:132K  isahaya
ina5006ac1.pdf pdf_icon

INA5002AP1

INA5006AC1 PRELIMINARY Notice This is not a final specification FOR HIGH CURRENT DRIVE APPLICATION Some parametric are subject to change. SILICON PNP EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING UNIT mm 2.8 INA5006AC1 is a silicon PNP epitaxial type transistor. 0.65 1.5 0.65 It is designed with high collector current and small VCE(sat). FEATURE Super mini pack

Otros transistores... IMZ88 , KRC152F , KRC157F , KRC158F , KTA1050 , INA5001AC1 , INA5001AP1 , INA5002AC1 , 2SD313 , INA5005AC1 , INA5006AC1 , INA5008AH1 , INC2002AC1 , INC2002AM1 , INC2002AU1 , KZT1053A , KZT1149A .

History: DTL3407

 

 
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