INA5002AP1 Datasheet PDF and Replacements, Transistor Equivalent Finder, Cross Reference

INA5002AP1 Datasheet. Specs and Replacement

Type Designator: INA5002AP1 📄📄

SMD Transistor Code: BA

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 25 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SOT89

INA5002AP1 Substitution

- BJT ⓘ Cross-Reference Search

INA5002AP1 datasheet

..1. Size:128K isahaya

ina5002ap1.pdf pdf_icon

INA5002AP1 For low frequency power amplify Silicon PNP Epitaxial DESCRIPTION OUTLINE DRAWING UNIT INA5002AP1 is a silicon PNP epitaxial transistor designed for relay 4.6 MAX drive or Power supply application. 1.5 1.6 FEATURE Small package for easy mounting. High voltage VCEO=-60V C E B High collector current IC=-3A Low VCE(sat) VCE sat =-0.6... See More ⇒

6.1. Size:232K isahaya

ina5002ac1.pdf pdf_icon

INA5002AC1 PRELIMINARY Notice This is not a final specification FOR LOW FREQUENCY AMPLIFY APPLICATION Some parametric are subject to change. SILICON PNP EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING UNIT mm 2.8 INA5002AC1 is a silicon PNP epitaxial transistor designed for 0.65 1.5 0.65 relay drive or Power supply application. FEATURE Super mini package for ... See More ⇒

8.1. Size:106K isahaya

ina5005ac1.pdf pdf_icon

INA5005AC1 PRELIMINARY Notice This is not a final specification FOR HIGH CURRENT DRIVE APPLICATION Some parametric are subject to change. SILICON PNP EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING UNIT mm 2.8 INA5005AC1 is a silicon PNP epitaxial type transistor. 0.65 1.5 0.65 It is designed with high collector current and small VCE(sat). FEATURE Super mini pack... See More ⇒

8.2. Size:132K isahaya

ina5006ac1.pdf pdf_icon

INA5006AC1 PRELIMINARY Notice This is not a final specification FOR HIGH CURRENT DRIVE APPLICATION Some parametric are subject to change. SILICON PNP EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING UNIT mm 2.8 INA5006AC1 is a silicon PNP epitaxial type transistor. 0.65 1.5 0.65 It is designed with high collector current and small VCE(sat). FEATURE Super mini pack... See More ⇒