TPC6901 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

TPC6901 TOSHIBA Multi-Chip Transistor Silicon NPN & PNP Epitaxial Type TPC6901 High-Speed Switching Applications Unit: mmMOS Gate Drive Applications NPN and PNP transistors are mounted on a compact and slim package. High DC current gain: NPN hFE = 400 to 1000 : PNP hFE = 200 to 500 Low collector-emitter saturation voltage : NPN VCE (sat) = 0.17 V (max) : P

TPC6901A TOSHIBA Multi-Chip Transistor Silicon NPN / PNP Epitaxial Type TPC6901A High-Speed Switching Applications Unit: mmMOS Gate Drive Applications NPN and PNP transistors are mounted on a compact and slim package. High DC current gain : NPN hFE = 400 to 1000 : PNP hFE = 200 to 500 Low collector-emitter saturation voltage : NPN VCE (sat) = 0.17 V (max) :

TPC6901A TOSHIBA Multi-Chip Transistor Silicon NPN / PNP Epitaxial Type TPC6901A High-Speed Switching Applications Unit: mmMOS Gate Drive Applications NPN and PNP transistors are mounted on a compact and slim package. High DC current gain : NPN hFE = 400 to 1000 : PNP hFE = 200 to 500 Low collector-emitter saturation voltage : NPN VCE (sat) = 0.17 V (max) :

TPC6902 TOSHIBA Multi-Chip Transistor Silicon NPN / PNP Epitaxial Type TPC6902 High-Speed Switching Applications Unit: mmMOS Gate Drive Applications NPN and PNP transistors are mounted on a compact and slim package. High DC current gain : NPN hFE = 200 to 500 (IC = 0.2 A) : PNP hFE = 200 to 500 (IC = -0.2 A) Low collector-emitter saturation voltage : NPN VCE (sat) = 0.14

TPC6902 TOSHIBA Multi-Chip Transistor Silicon NPN / PNP Epitaxial Type TPC6902 High-Speed Switching Applications Unit: mmMOS Gate Drive Applications NPN and PNP transistors are mounted on a compact and slim package. High DC current gain : NPN hFE = 200 to 500 (IC = 0.2 A) : PNP hFE = 200 to 500 (IC = -0.2 A) Low collector-emitter saturation voltage : NPN VCE (sat) = 0.14