TPC6901 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TPC6901

Código: H6A

Material: Si

Polaridad de transistor: NPN*PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.33 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 0.7 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Capacitancia de salida (Cc): 8 pF

Ganancia de corriente contínua (hFE): 125

Encapsulados: SOT457

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TPC6901 datasheet

 ..1. Size:205K  toshiba
 tpc6901.pdf pdf_icon

TPC6901

TPC6901 TOSHIBA Multi-Chip Transistor Silicon NPN & PNP Epitaxial Type TPC6901 High-Speed Switching Applications Unit mm MOS Gate Drive Applications NPN and PNP transistors are mounted on a compact and slim package. High DC current gain NPN hFE = 400 to 1000 PNP hFE = 200 to 500 Low collector-emitter saturation voltage NPN VCE (sat) = 0.17 V (max) P

 0.1. Size:225K  toshiba
 tpc6901a.pdf pdf_icon

TPC6901

TPC6901A TOSHIBA Multi-Chip Transistor Silicon NPN / PNP Epitaxial Type TPC6901A High-Speed Switching Applications Unit mm MOS Gate Drive Applications NPN and PNP transistors are mounted on a compact and slim package. High DC current gain NPN hFE = 400 to 1000 PNP hFE = 200 to 500 Low collector-emitter saturation voltage NPN VCE (sat) = 0.17 V (max)

 0.2. Size:226K  toshiba
 tpc6901a .pdf pdf_icon

TPC6901

TPC6901A TOSHIBA Multi-Chip Transistor Silicon NPN / PNP Epitaxial Type TPC6901A High-Speed Switching Applications Unit mm MOS Gate Drive Applications NPN and PNP transistors are mounted on a compact and slim package. High DC current gain NPN hFE = 400 to 1000 PNP hFE = 200 to 500 Low collector-emitter saturation voltage NPN VCE (sat) = 0.17 V (max)

 8.1. Size:197K  toshiba
 tpc6902 .pdf pdf_icon

TPC6901

TPC6902 TOSHIBA Multi-Chip Transistor Silicon NPN / PNP Epitaxial Type TPC6902 High-Speed Switching Applications Unit mm MOS Gate Drive Applications NPN and PNP transistors are mounted on a compact and slim package. High DC current gain NPN hFE = 200 to 500 (IC = 0.2 A) PNP hFE = 200 to 500 (IC = -0.2 A) Low collector-emitter saturation voltage NPN VCE (sat) = 0.14

MOSTRAR MÁS

Otros transistores... KTC3205-O, KTC3205-Y, KTC3880LT1, TPA2029NND03, TPA2030NND03, TPC2715NND03, TPC5658NND03, TPC5663NND03, 13003, TPC6901A, TPC6902, TPCP8902, TPCP8F01, TPCP8G01, KTC3875-GR, KTC3875LT1, KTC3875-Y