TPC6901 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPC6901
Código: H6A
Material: Si
Polaridad de transistor: NPN*PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.33 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 0.7 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 8 pF
Ganancia de corriente contínua (hfe): 125
Paquete / Cubierta: SOT457
Búsqueda de reemplazo de transistor bipolar TPC6901
TPC6901 Datasheet (PDF)
tpc6901.pdf
TPC6901 TOSHIBA Multi-Chip Transistor Silicon NPN & PNP Epitaxial Type TPC6901 High-Speed Switching Applications Unit: mmMOS Gate Drive Applications NPN and PNP transistors are mounted on a compact and slim package. High DC current gain: NPN hFE = 400 to 1000 : PNP hFE = 200 to 500 Low collector-emitter saturation voltage : NPN VCE (sat) = 0.17 V (max) : P
tpc6901a.pdf
TPC6901A TOSHIBA Multi-Chip Transistor Silicon NPN / PNP Epitaxial Type TPC6901A High-Speed Switching Applications Unit: mmMOS Gate Drive Applications NPN and PNP transistors are mounted on a compact and slim package. High DC current gain : NPN hFE = 400 to 1000 : PNP hFE = 200 to 500 Low collector-emitter saturation voltage : NPN VCE (sat) = 0.17 V (max) :
tpc6901a .pdf
TPC6901A TOSHIBA Multi-Chip Transistor Silicon NPN / PNP Epitaxial Type TPC6901A High-Speed Switching Applications Unit: mmMOS Gate Drive Applications NPN and PNP transistors are mounted on a compact and slim package. High DC current gain : NPN hFE = 400 to 1000 : PNP hFE = 200 to 500 Low collector-emitter saturation voltage : NPN VCE (sat) = 0.17 V (max) :
tpc6902 .pdf
TPC6902 TOSHIBA Multi-Chip Transistor Silicon NPN / PNP Epitaxial Type TPC6902 High-Speed Switching Applications Unit: mmMOS Gate Drive Applications NPN and PNP transistors are mounted on a compact and slim package. High DC current gain : NPN hFE = 200 to 500 (IC = 0.2 A) : PNP hFE = 200 to 500 (IC = -0.2 A) Low collector-emitter saturation voltage : NPN VCE (sat) = 0.14
tpc6902.pdf
TPC6902 TOSHIBA Multi-Chip Transistor Silicon NPN / PNP Epitaxial Type TPC6902 High-Speed Switching Applications Unit: mmMOS Gate Drive Applications NPN and PNP transistors are mounted on a compact and slim package. High DC current gain : NPN hFE = 200 to 500 (IC = 0.2 A) : PNP hFE = 200 to 500 (IC = -0.2 A) Low collector-emitter saturation voltage : NPN VCE (sat) = 0.14
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
