TPC6901 Specs and Replacement

Type Designator: TPC6901

SMD Transistor Code: H6A

Material of Transistor: Si

Polarity: NPN*PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.33 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 0.7 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Collector Capacitance (Cc): 8 pF

Forward Current Transfer Ratio (hFE), MIN: 125

Noise Figure, dB: -

Package: SOT457

 TPC6901 Substitution

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TPC6901 datasheet

 ..1. Size:205K  toshiba

 tpc6901.pdf pdf_icon

TPC6901

TPC6901 TOSHIBA Multi-Chip Transistor Silicon NPN & PNP Epitaxial Type TPC6901 High-Speed Switching Applications Unit mm MOS Gate Drive Applications NPN and PNP transistors are mounted on a compact and slim package. High DC current gain NPN hFE = 400 to 1000 PNP hFE = 200 to 500 Low collector-emitter saturation voltage NPN VCE (sat) = 0.17 V (max) P... See More ⇒

 0.1. Size:225K  toshiba

 tpc6901a.pdf pdf_icon

TPC6901

TPC6901A TOSHIBA Multi-Chip Transistor Silicon NPN / PNP Epitaxial Type TPC6901A High-Speed Switching Applications Unit mm MOS Gate Drive Applications NPN and PNP transistors are mounted on a compact and slim package. High DC current gain NPN hFE = 400 to 1000 PNP hFE = 200 to 500 Low collector-emitter saturation voltage NPN VCE (sat) = 0.17 V (max) ... See More ⇒

 0.2. Size:226K  toshiba

 tpc6901a .pdf pdf_icon

TPC6901

TPC6901A TOSHIBA Multi-Chip Transistor Silicon NPN / PNP Epitaxial Type TPC6901A High-Speed Switching Applications Unit mm MOS Gate Drive Applications NPN and PNP transistors are mounted on a compact and slim package. High DC current gain NPN hFE = 400 to 1000 PNP hFE = 200 to 500 Low collector-emitter saturation voltage NPN VCE (sat) = 0.17 V (max) ... See More ⇒

 8.1. Size:197K  toshiba

 tpc6902 .pdf pdf_icon

TPC6901

TPC6902 TOSHIBA Multi-Chip Transistor Silicon NPN / PNP Epitaxial Type TPC6902 High-Speed Switching Applications Unit mm MOS Gate Drive Applications NPN and PNP transistors are mounted on a compact and slim package. High DC current gain NPN hFE = 200 to 500 (IC = 0.2 A) PNP hFE = 200 to 500 (IC = -0.2 A) Low collector-emitter saturation voltage NPN VCE (sat) = 0.14 ... See More ⇒

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Detailed specifications: KTC3205-O, KTC3205-Y, KTC3880LT1, TPA2029NND03, TPA2030NND03, TPC2715NND03, TPC5658NND03, TPC5663NND03, 13003, TPC6901A, TPC6902, TPCP8902, TPCP8F01, TPCP8G01, KTC3875-GR, KTC3875LT1, KTC3875-Y

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