TPC6902 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TPC6902

Código: H6C

Material: Si

Polaridad de transistor: NPN*PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.6 W

Tensión colector-base (Vcb): 30 V

Tensión colector-emisor (Vce): 30 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Capacitancia de salida (Cc): 14 pF

Ganancia de corriente contínua (hFE): 200

Encapsulados: SOT457

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TPC6902 datasheet

 ..1. Size:197K  toshiba
 tpc6902 .pdf pdf_icon

TPC6902

TPC6902 TOSHIBA Multi-Chip Transistor Silicon NPN / PNP Epitaxial Type TPC6902 High-Speed Switching Applications Unit mm MOS Gate Drive Applications NPN and PNP transistors are mounted on a compact and slim package. High DC current gain NPN hFE = 200 to 500 (IC = 0.2 A) PNP hFE = 200 to 500 (IC = -0.2 A) Low collector-emitter saturation voltage NPN VCE (sat) = 0.14

 ..2. Size:196K  toshiba
 tpc6902.pdf pdf_icon

TPC6902

TPC6902 TOSHIBA Multi-Chip Transistor Silicon NPN / PNP Epitaxial Type TPC6902 High-Speed Switching Applications Unit mm MOS Gate Drive Applications NPN and PNP transistors are mounted on a compact and slim package. High DC current gain NPN hFE = 200 to 500 (IC = 0.2 A) PNP hFE = 200 to 500 (IC = -0.2 A) Low collector-emitter saturation voltage NPN VCE (sat) = 0.14

 8.1. Size:225K  toshiba
 tpc6901a.pdf pdf_icon

TPC6902

TPC6901A TOSHIBA Multi-Chip Transistor Silicon NPN / PNP Epitaxial Type TPC6901A High-Speed Switching Applications Unit mm MOS Gate Drive Applications NPN and PNP transistors are mounted on a compact and slim package. High DC current gain NPN hFE = 400 to 1000 PNP hFE = 200 to 500 Low collector-emitter saturation voltage NPN VCE (sat) = 0.17 V (max)

 8.2. Size:205K  toshiba
 tpc6901.pdf pdf_icon

TPC6902

TPC6901 TOSHIBA Multi-Chip Transistor Silicon NPN & PNP Epitaxial Type TPC6901 High-Speed Switching Applications Unit mm MOS Gate Drive Applications NPN and PNP transistors are mounted on a compact and slim package. High DC current gain NPN hFE = 400 to 1000 PNP hFE = 200 to 500 Low collector-emitter saturation voltage NPN VCE (sat) = 0.17 V (max) P

MOSTRAR MÁS

Otros transistores... KTC3880LT1, TPA2029NND03, TPA2030NND03, TPC2715NND03, TPC5658NND03, TPC5663NND03, TPC6901, TPC6901A, 2SC2073, TPCP8902, TPCP8F01, TPCP8G01, KTC3875-GR, KTC3875LT1, KTC3875-Y, KTC3876-GR, KTC3876-Y