TPC6902 Datasheet. Specs and Replacement

Type Designator: TPC6902  📄📄 

SMD Transistor Code: H6C

Material of Transistor: Si

Polarity: NPN*PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.6 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Collector Capacitance (Cc): 14 pF

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: SOT457

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TPC6902 datasheet

 ..1. Size:197K  toshiba

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TPC6902

TPC6902 TOSHIBA Multi-Chip Transistor Silicon NPN / PNP Epitaxial Type TPC6902 High-Speed Switching Applications Unit mm MOS Gate Drive Applications NPN and PNP transistors are mounted on a compact and slim package. High DC current gain NPN hFE = 200 to 500 (IC = 0.2 A) PNP hFE = 200 to 500 (IC = -0.2 A) Low collector-emitter saturation voltage NPN VCE (sat) = 0.14 ... See More ⇒

 ..2. Size:196K  toshiba

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TPC6902

TPC6902 TOSHIBA Multi-Chip Transistor Silicon NPN / PNP Epitaxial Type TPC6902 High-Speed Switching Applications Unit mm MOS Gate Drive Applications NPN and PNP transistors are mounted on a compact and slim package. High DC current gain NPN hFE = 200 to 500 (IC = 0.2 A) PNP hFE = 200 to 500 (IC = -0.2 A) Low collector-emitter saturation voltage NPN VCE (sat) = 0.14 ... See More ⇒

 8.1. Size:225K  toshiba

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TPC6902

TPC6901A TOSHIBA Multi-Chip Transistor Silicon NPN / PNP Epitaxial Type TPC6901A High-Speed Switching Applications Unit mm MOS Gate Drive Applications NPN and PNP transistors are mounted on a compact and slim package. High DC current gain NPN hFE = 400 to 1000 PNP hFE = 200 to 500 Low collector-emitter saturation voltage NPN VCE (sat) = 0.17 V (max) ... See More ⇒

 8.2. Size:205K  toshiba

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TPC6902

TPC6901 TOSHIBA Multi-Chip Transistor Silicon NPN & PNP Epitaxial Type TPC6901 High-Speed Switching Applications Unit mm MOS Gate Drive Applications NPN and PNP transistors are mounted on a compact and slim package. High DC current gain NPN hFE = 400 to 1000 PNP hFE = 200 to 500 Low collector-emitter saturation voltage NPN VCE (sat) = 0.17 V (max) P... See More ⇒

Detailed specifications: KTC3880LT1, TPA2029NND03, TPA2030NND03, TPC2715NND03, TPC5658NND03, TPC5663NND03, TPC6901, TPC6901A, A1941, TPCP8902, TPCP8F01, TPCP8G01, KTC3875-GR, KTC3875LT1, KTC3875-Y, KTC3876-GR, KTC3876-Y

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