TPC6902 - описание и поиск аналогов

TPC6902 TOSHIBA Multi-Chip Transistor Silicon NPN / PNP Epitaxial Type TPC6902 High-Speed Switching Applications Unit mm MOS Gate Drive Applications NPN and PNP transistors are mounted on a compact and slim package. High DC current gain NPN hFE = 200 to 500 (IC = 0.2 A) PNP hFE = 200 to 500 (IC = -0.2 A) Low collector-emitter saturation voltage NPN VCE (sat) = 0.14

TPC6902 TOSHIBA Multi-Chip Transistor Silicon NPN / PNP Epitaxial Type TPC6902 High-Speed Switching Applications Unit mm MOS Gate Drive Applications NPN and PNP transistors are mounted on a compact and slim package. High DC current gain NPN hFE = 200 to 500 (IC = 0.2 A) PNP hFE = 200 to 500 (IC = -0.2 A) Low collector-emitter saturation voltage NPN VCE (sat) = 0.14

TPC6901A TOSHIBA Multi-Chip Transistor Silicon NPN / PNP Epitaxial Type TPC6901A High-Speed Switching Applications Unit mm MOS Gate Drive Applications NPN and PNP transistors are mounted on a compact and slim package. High DC current gain NPN hFE = 400 to 1000 PNP hFE = 200 to 500 Low collector-emitter saturation voltage NPN VCE (sat) = 0.17 V (max)

TPC6901 TOSHIBA Multi-Chip Transistor Silicon NPN & PNP Epitaxial Type TPC6901 High-Speed Switching Applications Unit mm MOS Gate Drive Applications NPN and PNP transistors are mounted on a compact and slim package. High DC current gain NPN hFE = 400 to 1000 PNP hFE = 200 to 500 Low collector-emitter saturation voltage NPN VCE (sat) = 0.17 V (max) P

TPC6901A TOSHIBA Multi-Chip Transistor Silicon NPN / PNP Epitaxial Type TPC6901A High-Speed Switching Applications Unit mm MOS Gate Drive Applications NPN and PNP transistors are mounted on a compact and slim package. High DC current gain NPN hFE = 400 to 1000 PNP hFE = 200 to 500 Low collector-emitter saturation voltage NPN VCE (sat) = 0.17 V (max)