KTC3876-GR
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KTC3876-GR
Código: WY
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2
W
Tensión colector-base (Vcb): 35
V
Tensión colector-emisor (Vce): 30
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.5
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 300
MHz
Capacitancia de salida (Cc): 2
pF
Ganancia de corriente contínua (hfe): 200
Paquete / Cubierta:
SOT23
Búsqueda de reemplazo de transistor bipolar KTC3876-GR
KTC3876-GR
Datasheet (PDF)
0.1. Size:640K mcc
ktc3876-gr-y.pdf
MCCMicro Commercial ComponentsTMKTC3876-Y20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311KTC3876-GRPhone: (818) 701-4933Fax: (818) 701-4939Features High hFE and Low NoiseEpitaxial Planar Complementary to KTA1505 Lead Free Finish/Rohs Compliant ("P"Suffix designates NPN Transistors RoHS Compliant. See ordering information) Halo
7.1. Size:177K secos
ktc3876.pdf
KTC3876 0.5A , 35V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURE A High hFE L Complementary to KTA1505 33Top View C B1CLASSIFICATION OF hFE 1 22K EProduct-Rank KTC3876-O KTC3876-Y KTC3876-GR DRange 70~140 120~240 200~400 H JF GMarking Code WO W
7.2. Size:442K kec
ktc3876s.pdf
SEMICONDUCTOR KTC3876STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION. EL B LFEATURESDIM MILLIMETERSExcellent hFE Linearity_+2.93 0.20AB 1.30+0.20/-0.15: hFE(2)=25(Min.) at VCE=6V, IC=400mA.C 1.30 MAX2Complementary to KTA1505S. 3 D 0.45+0.15/-0.05E 2.40+0.30/-0.201G 1.90H 0.95J 0.13+0.10/-0.05K 0.00 ~
7.3. Size:736K htsemi
ktc3876.pdf
KTC3876SOT-23 TRANSISTOR (NPN) FEATURES High hFE 1. BASE Complementary to KTA1505 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 35 VVCEO Collector-Emitter Voltage 30 VVEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 500 mA PC Collector Power Dissipation 200 mW
7.4. Size:208K lge
ktc3876.pdf
KTC3876 SOT-23 Transistor(NPN)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features High hFE: hFE=70-400 Complementary to KTA1505 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Collector-Base Voltage 35 VVCEO Collector-Emitter Voltage 30 VVEBO Emitter-Base Voltage 5 V IC Collector Current -Contin
7.5. Size:64K wietron
ktc3876.pdf
KTC3876Plastic-Encapsulate TransistorsNPN Silicon COLLECTOR31BASE2SOT-23EMITTER(Ta=25 C)MAXIMUM RATINGSRating Symbol ValueUnitCollector-Emitter Voltage VCEO 30 VdcCollector-Base Voltage VCBO35 VdcEmitter-Base Voltage VEBO5.0 VdcCollector Current -Continuous ICmAdc500THERMAL CHARACTERISTICSCharacteristics Symbol ValueUnitTotal Device Dissipatio
7.6. Size:338K kexin
ktc3876.pdf
SMD Type TransistorsNPN TransistorsKTC3876 (KTC3876S)SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Excellent hFE Linearity Complementary to KTA1505/KTA1505S1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 35 Collecto
Otros transistores... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.