T10N60GP Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: T10N60GP  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 2 W

Tensión colector-base (Vcb): 70 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 10 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 2 MHz

Ganancia de corriente contínua (hFE): 20

Encapsulados: TO220

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T10N60GP datasheet

 ..1. Size:122K  chenmko
t10n60gp.pdf pdf_icon

T10N60GP

CHENMKO ENTERPRISE CO.,LTD T10N60GP SURFACE MOUNT NPN Silicon Transistor VOLTAGE 60Volts CURRENT 10 Ampere APPLICATION * General purpose applications. * Other switching applications. TO-220 FEATURE * Package. (TO-220) * DC Current Gain Specified to Ic=10A ( ) .187 4.7 ( ) .148 3.8 ( ) .153 3.9 * High Current Gain-Bandwidth Product fT=2MHz (Min.) .413 10.5 ( ) .108 ( )

 8.1. Size:2253K  1
dmt10n60 dmf10n60 dmk10n60 dmg10n60.pdf pdf_icon

T10N60GP

12N60 600V N-Channel Power MOSFET RDS(ON)

 8.2. Size:375K  aosemi
aot10n60.pdf pdf_icon

T10N60GP

AOT10N60/AOB10N60/AOTF10N60 600V,10A N-Channel MOSFET General Description Product Summary VDS 700V@150 The AOT10N60 & AOB10N60 & AOTF10N60 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 10A process that is designed to deliver high levels of RDS(ON) (at VGS=10V)

 8.3. Size:429K  aosemi
aot10n60 aob10n60 aotf10n60.pdf pdf_icon

T10N60GP

AOT10N60/AOB10N60/AOTF10N60 600V,10A N-Channel MOSFET General Description Product Summary VDS 700V@150 The AOT10N60 & AOB10N60 & AOTF10N60 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 10A process that is designed to deliver high levels of RDS(ON) (at VGS=10V)

Otros transistores... KTC4075-BL, KTC4075-GR, KTC4075-O, KTC4075-Y, KTC4347, KTC4373-O, KTC4373-Y, T03N100GP, TIP31, T11, TFH1036, TFH1037, TFH2411, TFH2412, TFH2444, TFH45, TFJD1760