T10N60GP Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: T10N60GP 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 2 W
Tensión colector-base (Vcb): 70 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 10 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 2 MHz
Ganancia de corriente contínua (hFE): 20
Encapsulados: TO220
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T10N60GP datasheet
t10n60gp.pdf
CHENMKO ENTERPRISE CO.,LTD T10N60GP SURFACE MOUNT NPN Silicon Transistor VOLTAGE 60Volts CURRENT 10 Ampere APPLICATION * General purpose applications. * Other switching applications. TO-220 FEATURE * Package. (TO-220) * DC Current Gain Specified to Ic=10A ( ) .187 4.7 ( ) .148 3.8 ( ) .153 3.9 * High Current Gain-Bandwidth Product fT=2MHz (Min.) .413 10.5 ( ) .108 ( )
aot10n60.pdf
AOT10N60/AOB10N60/AOTF10N60 600V,10A N-Channel MOSFET General Description Product Summary VDS 700V@150 The AOT10N60 & AOB10N60 & AOTF10N60 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 10A process that is designed to deliver high levels of RDS(ON) (at VGS=10V)
aot10n60 aob10n60 aotf10n60.pdf
AOT10N60/AOB10N60/AOTF10N60 600V,10A N-Channel MOSFET General Description Product Summary VDS 700V@150 The AOT10N60 & AOB10N60 & AOTF10N60 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 10A process that is designed to deliver high levels of RDS(ON) (at VGS=10V)
Otros transistores... KTC4075-BL, KTC4075-GR, KTC4075-O, KTC4075-Y, KTC4347, KTC4373-O, KTC4373-Y, T03N100GP, TIP31, T11, TFH1036, TFH1037, TFH2411, TFH2412, TFH2444, TFH45, TFJD1760
Parámetros del transistor bipolar y su interrelación.
History: 2SC4108N | KT611G | KRC413V | MUN5316DW1 | KRX205U | KRC453 | 2SA1513
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