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T10N60GP Specs and Replacement


   Type Designator: T10N60GP
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 2 W
   Maximum Collector-Base Voltage |Vcb|: 70 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 2 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO220

 T10N60GP Transistor Equivalent Substitute - Cross-Reference Search

   

T10N60GP detailed specifications

 ..1. Size:122K  chenmko
t10n60gp.pdf pdf_icon

T10N60GP

CHENMKO ENTERPRISE CO.,LTD T10N60GP SURFACE MOUNT NPN Silicon Transistor VOLTAGE 60Volts CURRENT 10 Ampere APPLICATION * General purpose applications. * Other switching applications. TO-220 FEATURE * Package. (TO-220) * DC Current Gain Specified to Ic=10A ( ) .187 4.7 ( ) .148 3.8 ( ) .153 3.9 * High Current Gain-Bandwidth Product fT=2MHz (Min.) .413 10.5 ( ) .108 ( ) ... See More ⇒

 8.1. Size:2253K  1
dmt10n60 dmf10n60 dmk10n60 dmg10n60.pdf pdf_icon

T10N60GP

12N60 600V N-Channel Power MOSFET RDS(ON)... See More ⇒

 8.2. Size:375K  aosemi
aot10n60.pdf pdf_icon

T10N60GP

AOT10N60/AOB10N60/AOTF10N60 600V,10A N-Channel MOSFET General Description Product Summary VDS 700V@150 The AOT10N60 & AOB10N60 & AOTF10N60 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 10A process that is designed to deliver high levels of RDS(ON) (at VGS=10V) ... See More ⇒

Detailed specifications: KTC4075-BL , KTC4075-GR , KTC4075-O , KTC4075-Y , KTC4347 , KTC4373-O , KTC4373-Y , T03N100GP , TIP31 , T11 , TFH1036 , TFH1037 , TFH2411 , TFH2412 , TFH2444 , TFH45 , TFJD1760 .

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