T10N60GP Datasheet. Specs and Replacement
Type Designator: T10N60GP 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 70 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 2 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO220
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T10N60GP datasheet
CHENMKO ENTERPRISE CO.,LTD T10N60GP SURFACE MOUNT NPN Silicon Transistor VOLTAGE 60Volts CURRENT 10 Ampere APPLICATION * General purpose applications. * Other switching applications. TO-220 FEATURE * Package. (TO-220) * DC Current Gain Specified to Ic=10A ( ) .187 4.7 ( ) .148 3.8 ( ) .153 3.9 * High Current Gain-Bandwidth Product fT=2MHz (Min.) .413 10.5 ( ) .108 ( ) ... See More ⇒
dmt10n60 dmf10n60 dmk10n60 dmg10n60.pdf ![]()
12N60 600V N-Channel Power MOSFET RDS(ON)... See More ⇒
AOT10N60/AOB10N60/AOTF10N60 600V,10A N-Channel MOSFET General Description Product Summary VDS 700V@150 The AOT10N60 & AOB10N60 & AOTF10N60 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 10A process that is designed to deliver high levels of RDS(ON) (at VGS=10V) ... See More ⇒
aot10n60 aob10n60 aotf10n60.pdf ![]()
AOT10N60/AOB10N60/AOTF10N60 600V,10A N-Channel MOSFET General Description Product Summary VDS 700V@150 The AOT10N60 & AOB10N60 & AOTF10N60 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 10A process that is designed to deliver high levels of RDS(ON) (at VGS=10V) ... See More ⇒
Detailed specifications: KTC4075-BL, KTC4075-GR, KTC4075-O, KTC4075-Y, KTC4347, KTC4373-O, KTC4373-Y, T03N100GP, TIP31, T11, TFH1036, TFH1037, TFH2411, TFH2412, TFH2444, TFH45, TFJD1760
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