TTC011B . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

TTC011B NPN TTC011B TTC011B TTC011B TTC011B 1. 1. 1. 1. 2. 2. 2. 2. (1) VCEO = 230 V ( ) (2) Cob = 20 pF ( ) (3)

TTC011 Bipolar Transistors Silicon NPN Triple-Diffused Type TTC011 TTC011 TTC011 TTC011 1. Applications 1. Applications 1. Applications 1. Applications High-Voltage Switching LCD Backlighting 2. Features 2. Features 2. Features 2. Features (1) High collector breakdown voltage VCEO = 230 V (2) High DC current gain hFE = 100 to 320 (IC = 0.2 A) 3. Packaging and Interna

TTC012 Bipolar Transistors Silicon NPN Triple-Diffused Type TTC012 TTC012 TTC012 TTC012 1. Applications 1. Applications 1. Applications 1. Applications High-Speed High-Voltage Switching Switching Voltage Regulators High-Speed DC-DC Converters 2. Features 2. Features 2. Features 2. Features (1) High speed switching tf = 0.15 s (typ.) (IC = 0.5 A) (2) High collec

TTC015B Bipolar Transistors Silicon NPN Epitaxial Type TTC015B TTC015B TTC015B TTC015B 1. Applications 1. Applications 1. Applications 1. Applications Power Amplifiers Power Switching 2. Features 2. Features 2. Features 2. Features (1) High DC current gain hFE = 100 to 200 (IC = 0.5 A) (2) Low collector emitter saturation voltage VCE(sat) = 0.5 V (max) (IC = 1A) (3

TTC014 Bipolar Transistors Silicon NPN Triple-Diffused Type TTC014 TTC014 TTC014 TTC014 1. Applications 1. Applications 1. Applications 1. Applications High-Speed High-Voltage Switching Switching Voltage Regulators High-Speed DC-DC Converters 2. Features 2. Features 2. Features 2. Features (1) High DC current gain hFE = 100 to 200 (IC = 0.1 A) (2) High collector

TTC017 Bipolar Transistors Silicon NPN Epitaxial Type TTC017 TTC017 TTC017 TTC017 1. Applications 1. Applications 1. Applications 1. Applications Power Amplifiers Power Switching 2. Features 2. Features 2. Features 2. Features (1) High DC current gain hFE = 180 to 450 (IC = 0.5 A) (2) Low collector saturation voltage VCE(sat) = 0.5 V (max) (IC = 1 A) (3) High-speed

TTC013 Bipolar Transistors Silicon NPN Triple-Diffused Type TTC013 TTC013 TTC013 TTC013 1. Applications 1. Applications 1. Applications 1. Applications High-Voltage Switching LCD Backlighting 2. Features 2. Features 2. Features 2. Features (1) High collector breakdown voltage VCEO = 350 V (2) High DC current gain hFE = 100 to 200 (IC = 50 mA) 3. Packaging and Interna

TTC016 Bipolar Transistors Silicon NPN Epitaxial Type TTC016 TTC016 TTC016 TTC016 1. Applications 1. Applications 1. Applications 1. Applications High-Speed Switching DC-DC Converters 2. Features 2. Features 2. Features 2. Features (1) High DC current gain hFE = 400 to 1000 (IC = 0.5 A) (2) Low collector saturation voltage VCE(sat) = 0.22 V (max) (IC = 1.6 A, IB = 3