TTC011B Datasheet and Replacement
Type Designator: TTC011B
SMD Transistor Code: C011B
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 230 V
Maximum Collector-Emitter Voltage |Vce|: 230 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO126N
TTC011B Datasheet (PDF)
ttc011b.pdf

TTC011B NPNTTC011BTTC011BTTC011BTTC011B1. 1. 1. 1. 2. 2. 2. 2. (1) : VCEO = 230 V ()(2) : Cob = 20 pF ()(3)
ttc011.pdf

TTC011Bipolar Transistors Silicon NPN Triple-Diffused TypeTTC011TTC011TTC011TTC0111. Applications1. Applications1. Applications1. Applications High-Voltage Switching LCD Backlighting2. Features2. Features2. Features2. Features(1) High collector breakdown voltage: VCEO = 230 V(2) High DC current gain: hFE = 100 to 320 (IC = 0.2 A)3. Packaging and Interna
ttc012.pdf

TTC012Bipolar Transistors Silicon NPN Triple-Diffused TypeTTC012TTC012TTC012TTC0121. Applications1. Applications1. Applications1. Applications High-Speed High-Voltage Switching Switching Voltage Regulators High-Speed DC-DC Converters2. Features2. Features2. Features2. Features(1) High speed switching : tf = 0.15 s (typ.) (IC = 0.5 A)(2) High collec
ttc015b.pdf

TTC015BBipolar Transistors Silicon NPN Epitaxial TypeTTC015BTTC015BTTC015BTTC015B1. Applications1. Applications1. Applications1. Applications Power Amplifiers Power Switching2. Features2. Features2. Features2. Features(1) High DC current gain : hFE = 100 to 200 (IC = 0.5 A)(2) Low collector emitter saturation voltage : VCE(sat) = 0.5 V (max) (IC = 1A)(3
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
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