TTD1409B Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TTD1409B

Código: D1409B

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 25 W

Tensión colector-base (Vcb): 600 V

Tensión colector-emisor (Vce): 400 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Capacitancia de salida (Cc): 35 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: TO220SIS

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TTD1409B datasheet

 ..1. Size:172K  toshiba
 ttd1409b.pdf pdf_icon

TTD1409B

TTD1409B Bipolar Transistors Silicon NPN Triple-Diffused Type TTD1409B TTD1409B TTD1409B TTD1409B 1. Applications 1. Applications 1. Applications 1. Applications High-Voltage Switching 2. Features 2. Features 2. Features 2. Features (1) High DC current gain hFE = 600 (min) (VCE = 2 V , IC = 2 A) (2) Monolithic construction with built-in base-emitter shunt resistor 3. Packa

 ..2. Size:202K  inchange semiconductor
 ttd1409b.pdf pdf_icon

TTD1409B

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor TTD1409B DESCRIPTION Collector Emitter Breakdown Voltage V = 400V(Min) (BR)CEO High DC Current Gain h = 600(Min) @ I = 2A FE C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use high-voltage switching applicatio

 9.1. Size:152K  toshiba
 ttd1410b.pdf pdf_icon

TTD1409B

TTD1410B Bipolar Transistors Silicon NPN Triple-Diffused Type TTD1410B TTD1410B TTD1410B TTD1410B 1. Applications 1. Applications 1. Applications 1. Applications High-Voltage Switching 2. Features 2. Features 2. Features 2. Features (1) High DC current gain hFE = 2000 (min) (VCE = 2 V , IC = 2 A) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packa

 9.2. Size:181K  toshiba
 ttd1415b.pdf pdf_icon

TTD1409B

TTD1415B Bipolar Transistors Silicon NPN Triple-Diffused Type TTD1415B TTD1415B TTD1415B TTD1415B 1. Applications 1. Applications 1. Applications 1. Applications High-Power Switching Hammer Drivers 2. Features 2. Features 2. Features 2. Features (1) High DC current gain hFE = 2000 (min) (VCE = 3 V, IC = 3 A) (2) Low collector-emitter saturation voltage VCE(sat) = 1.5

MOSTRAR MÁS

Otros transistores... TTC004B, TTC011B, TTC014, TTC015B, TTC016, TTC017, TTC3710B, TTC5460B, D209L, TTD1410B, TTD1415B, TTD1509B, TFM1759, TFN1036, TFN1037, TFN1386L, TFN1424