TTD1409B
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TTD1409B
Código: D1409B
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 25
W
Tensión colector-base (Vcb): 600
V
Tensión colector-emisor (Vce): 400
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 6
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 35
pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta:
TO220SIS
Búsqueda de reemplazo de transistor bipolar TTD1409B
TTD1409B
Datasheet (PDF)
..1. Size:172K toshiba
ttd1409b.pdf 
TTD1409BBipolar Transistors Silicon NPN Triple-Diffused TypeTTD1409BTTD1409BTTD1409BTTD1409B1. Applications1. Applications1. Applications1. Applications High-Voltage Switching2. Features2. Features2. Features2. Features(1) High DC current gain: hFE = 600 (min) (VCE = 2 V , IC = 2 A)(2) Monolithic construction with built-in base-emitter shunt resistor3. Packa
..2. Size:202K inchange semiconductor
ttd1409b.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor TTD1409BDESCRIPTIONCollectorEmitter Breakdown Voltage: V = 400V(Min)(BR)CEOHigh DC Current Gain: h = 600(Min) @ I = 2AFE C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use high-voltage switching applicatio
9.1. Size:152K toshiba
ttd1410b.pdf
TTD1410BBipolar Transistors Silicon NPN Triple-Diffused TypeTTD1410BTTD1410BTTD1410BTTD1410B1. Applications1. Applications1. Applications1. Applications High-Voltage Switching2. Features2. Features2. Features2. Features(1) High DC current gain: hFE = 2000 (min) (VCE = 2 V , IC = 2 A)3. Packaging and Internal Circuit3. Packaging and Internal Circuit3. Packa
9.2. Size:181K toshiba
ttd1415b.pdf
TTD1415BBipolar Transistors Silicon NPN Triple-Diffused TypeTTD1415BTTD1415BTTD1415BTTD1415B1. Applications1. Applications1. Applications1. Applications High-Power Switching Hammer Drivers2. Features2. Features2. Features2. Features(1) High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A)(2) Low collector-emitter saturation voltage: VCE(sat) = 1.5
9.3. Size:222K inchange semiconductor
ttd1415b.pdf
isc Silicon NPN Darlington Power Transistor TTD1415BDESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ I = 3AFE CLow Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 3ACE(sat) CComplement to Type TTB1020BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose amplifier and low-speedswitc
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