TTD1409B Specs and Replacement

Type Designator: TTD1409B

SMD Transistor Code: D1409B

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 25 W

Maximum Collector-Base Voltage |Vcb|: 600 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 6 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Collector Capacitance (Cc): 35 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO220SIS

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TTD1409B datasheet

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TTD1409B

TTD1409B Bipolar Transistors Silicon NPN Triple-Diffused Type TTD1409B TTD1409B TTD1409B TTD1409B 1. Applications 1. Applications 1. Applications 1. Applications High-Voltage Switching 2. Features 2. Features 2. Features 2. Features (1) High DC current gain hFE = 600 (min) (VCE = 2 V , IC = 2 A) (2) Monolithic construction with built-in base-emitter shunt resistor 3. Packa... See More ⇒

 ..2. Size:202K  inchange semiconductor

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TTD1409B

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor TTD1409B DESCRIPTION Collector Emitter Breakdown Voltage V = 400V(Min) (BR)CEO High DC Current Gain h = 600(Min) @ I = 2A FE C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use high-voltage switching applicatio... See More ⇒

 9.1. Size:152K  toshiba

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TTD1409B

TTD1410B Bipolar Transistors Silicon NPN Triple-Diffused Type TTD1410B TTD1410B TTD1410B TTD1410B 1. Applications 1. Applications 1. Applications 1. Applications High-Voltage Switching 2. Features 2. Features 2. Features 2. Features (1) High DC current gain hFE = 2000 (min) (VCE = 2 V , IC = 2 A) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packa... See More ⇒

 9.2. Size:181K  toshiba

 ttd1415b.pdf pdf_icon

TTD1409B

TTD1415B Bipolar Transistors Silicon NPN Triple-Diffused Type TTD1415B TTD1415B TTD1415B TTD1415B 1. Applications 1. Applications 1. Applications 1. Applications High-Power Switching Hammer Drivers 2. Features 2. Features 2. Features 2. Features (1) High DC current gain hFE = 2000 (min) (VCE = 3 V, IC = 3 A) (2) Low collector-emitter saturation voltage VCE(sat) = 1.5 ... See More ⇒

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Detailed specifications: TTC004B, TTC011B, TTC014, TTC015B, TTC016, TTC017, TTC3710B, TTC5460B, D209L, TTD1410B, TTD1415B, TTD1509B, TFM1759, TFN1036, TFN1037, TFN1386L, TFN1424

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