TTD1409B Datasheet, Equivalent, Cross Reference Search
Type Designator: TTD1409B
SMD Transistor Code: D1409B
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 600 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 150 °C
Collector Capacitance (Cc): 35 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO220SIS
TTD1409B Transistor Equivalent Substitute - Cross-Reference Search
TTD1409B Datasheet (PDF)
ttd1409b.pdf
TTD1409BBipolar Transistors Silicon NPN Triple-Diffused TypeTTD1409BTTD1409BTTD1409BTTD1409B1. Applications1. Applications1. Applications1. Applications High-Voltage Switching2. Features2. Features2. Features2. Features(1) High DC current gain: hFE = 600 (min) (VCE = 2 V , IC = 2 A)(2) Monolithic construction with built-in base-emitter shunt resistor3. Packa
ttd1409b.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor TTD1409BDESCRIPTIONCollectorEmitter Breakdown Voltage: V = 400V(Min)(BR)CEOHigh DC Current Gain: h = 600(Min) @ I = 2AFE C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use high-voltage switching applicatio
ttd1410b.pdf
TTD1410BBipolar Transistors Silicon NPN Triple-Diffused TypeTTD1410BTTD1410BTTD1410BTTD1410B1. Applications1. Applications1. Applications1. Applications High-Voltage Switching2. Features2. Features2. Features2. Features(1) High DC current gain: hFE = 2000 (min) (VCE = 2 V , IC = 2 A)3. Packaging and Internal Circuit3. Packaging and Internal Circuit3. Packa
ttd1415b.pdf
TTD1415BBipolar Transistors Silicon NPN Triple-Diffused TypeTTD1415BTTD1415BTTD1415BTTD1415B1. Applications1. Applications1. Applications1. Applications High-Power Switching Hammer Drivers2. Features2. Features2. Features2. Features(1) High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A)(2) Low collector-emitter saturation voltage: VCE(sat) = 1.5
ttd1415b.pdf
isc Silicon NPN Darlington Power Transistor TTD1415BDESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ I = 3AFE CLow Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 3ACE(sat) CComplement to Type TTB1020BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose amplifier and low-speedswitc
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
