TTD1410B . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TTD1410B
Código: D1410B
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 25 W
Tensión colector-base (Vcb): 300 V
Tensión colector-emisor (Vce): 250 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 6 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 30 pF
Ganancia de corriente contínua (hfe): 200
Paquete / Cubierta: TO220SIS
Búsqueda de reemplazo de transistor bipolar TTD1410B
TTD1410B Datasheet (PDF)
ttd1410b.pdf
TTD1410BBipolar Transistors Silicon NPN Triple-Diffused TypeTTD1410BTTD1410BTTD1410BTTD1410B1. Applications1. Applications1. Applications1. Applications High-Voltage Switching2. Features2. Features2. Features2. Features(1) High DC current gain: hFE = 2000 (min) (VCE = 2 V , IC = 2 A)3. Packaging and Internal Circuit3. Packaging and Internal Circuit3. Packa
ttd1415b.pdf
TTD1415BBipolar Transistors Silicon NPN Triple-Diffused TypeTTD1415BTTD1415BTTD1415BTTD1415B1. Applications1. Applications1. Applications1. Applications High-Power Switching Hammer Drivers2. Features2. Features2. Features2. Features(1) High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A)(2) Low collector-emitter saturation voltage: VCE(sat) = 1.5
ttd1415b.pdf
isc Silicon NPN Darlington Power Transistor TTD1415BDESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ I = 3AFE CLow Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 3ACE(sat) CComplement to Type TTB1020BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose amplifier and low-speedswitc
ttd1409b.pdf
TTD1409BBipolar Transistors Silicon NPN Triple-Diffused TypeTTD1409BTTD1409BTTD1409BTTD1409B1. Applications1. Applications1. Applications1. Applications High-Voltage Switching2. Features2. Features2. Features2. Features(1) High DC current gain: hFE = 600 (min) (VCE = 2 V , IC = 2 A)(2) Monolithic construction with built-in base-emitter shunt resistor3. Packa
ttd1409b.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor TTD1409BDESCRIPTIONCollectorEmitter Breakdown Voltage: V = 400V(Min)(BR)CEOHigh DC Current Gain: h = 600(Min) @ I = 2AFE C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use high-voltage switching applicatio
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050